Panasonic 2SD2000 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD2000

Silicon NPN triple diffusion planar type

For power switching

Features

■

●

High-speed switching

●

Satisfactory linearity of foward current transfer ratio h

●

Large collector power dissipation P

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V
V
V
I

CP

I

C

I

B

P

T
T

CBO

CEO

EBO

C

j

stg

C

=25˚C)

C

Ratings

80
60

6
8
4
1

35

2

150

–55 to +150

FE

Unit

W

˚C
˚C

Unit: mm

V
V
V
A
A
A

TO–220 Full Pack Package(a)

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Rank classification

FE1

Rank Q P

h

FE1

70 to 150 120 to 250

*

h

C

Symbol

I

CBO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE(sat)

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 80V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 4A
VCE = 4V, IC = 4A
IC = 4A, IB = 0.4A
VCE = 12V, IC = 0.2A, f = 10MHz

IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V

min

60
70
20

typ

80

0.3

1.0

0.2

max

100
100

250

2.0

1.5

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD2000

PC—Ta IC—V

40

)

(1)

35

W

(

C

30

25

20

15

(2)

10

(3)

5

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

BE(sat)—IC

TC=–25˚C

25˚C

100˚C

Collector current IC (A

IC/IB=10

)

CE

4

)

3

A

(

C

2

1

Collector current I

0

082647153

)

Collector to emitter voltage VCE (V

hFE—I

4

10

FE

3

10

TC=100˚C

2

10

25˚C

10

IB=40mA

35mA

30mA
25mA

20mA

C

–25˚C

TC=25˚C

15mA

10mA

5mA

VCE=4V

Forward current transfer ratio h

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

)
MHz

100

(

T

10

Transition frequency f

0.1

V

CE(sat)—IC

3

1

TC=100˚C

25˚C

0.01 0.1 1 100.03 0.3 3

–25˚C

Collector current IC (A

fT—I

C

VCE=12V
f=10MHz
T

C

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=10

)

=25˚C

)

Cob—V

10000

)
pF

(

ob

1000

100

10

Collector output capacitance C

1

1 10 100 10003 30 300

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

)
µs

(

10

f

,t

stg

,t

on

1

0.1

Switching time t

0.01
082647153

Collector current IC (A

t

stg

t

on

t

f

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

Area of safe operation (ASO)

100

30

)

I

CP

10

A

(

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

)