Panasonic 2SD1996 Datasheet

Transistor

V

B

IB=1mA

R

on

= ✕1000(Ω)

f=1kHz
V=0.3V

1kΩ

V

A

V

V

VA–V

B

V

B

2SD1996

Silicon NPN epitaxial planer type

For low-voltage output amplification
For muting
For DC-DC converter

Features

■

●

Low collector to emitter saturation voltage V

●

Low ON resistance Ron.

●

High foward current transfer ratio hFE.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse

*1

h

Rank classification

FE1

Rank R S T

h

FE1

200 ~ 350 300 ~ 500 400 ~ 800

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

*3

R

on

.

CE(sat)

Ratings

25
20
12

1

0.5
600
150

–55 ~ +150

Unit

V
V
V
A
A

mW

˚C
˚C

Conditions

VCB = 25V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A

*2

IC = 0.5A, IB = 20mA
IC = 0.5A, IB = 50mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f= 1MHz

0.15

0.65 max.

+0.1

0.45

–0.05

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

*2

*3

Ron Measurement circuit

6.9±0.1

0.7 4.0

2.5±0.5 2.5±0.5

123

1.2±0.1

0.65
max.

+

0.1

0.45

–

0.05

min

typ

25
20
12

200

60

0.13

200

10

1.0

Unit: mm

2.5±0.1

1.05
±0.05

1:Emitter
2:Collector
3:Base
MT1 Type Package

1.0

0.85

+0.1

–0.05

0.45

max

(1.45)

0.8

0.8

2.5±0.1

(HW type)

3.5±0.114.5±0.5

Unit

100

800

0.4

1.2
MHz

*2

Pulse measurement

nA

V
V
V

V
V

pF

Ω

1

Transistor

2SD1996

PC — Ta IC — V

800

)

700

mW

(

C

600

500

400

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

BE(sat)

100

)

V

(

30

BE(sat)

10

3

Ta=–25˚C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

C

IC/IB=10

25˚C

75˚C

)

V

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0654132

)

Collector to emitter voltage VCE (V

hFE — I

1200

FE

1000

800

Ta=75˚C

600

400

200

Forward current transfer ratio h

25˚C

–25˚C

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IB=4.0mA

C

Ta=25˚C

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

VCE=2V

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

–1 –3 –10 –30 –100

Emitter current IE (A

CE(sat)

Ta=75˚C

25˚C

fT — I

— I

–25˚C

E

C

IC/IB=25

)

VCB=10V
Ta=25˚C

)

Cob — V

24

)

pF

(

20

ob

16

12

8

4

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)

Ron — I

1000

300

)

100

Ω

(

on

ON resistance R

Ron measuring circuit

=1mA

I

B

30

10

3

1

0.3

0.1

0.01 0.1 1 100.03 0.3 3

Base current IB (mA

B

V

V

B

A

V

f=1kHz
V=0.3V

)