Panasonic 2SD1995 Datasheet

Transistor

2SD1995

Silicon NPN epitaxial planer type

For low-frequency amplification

Features

■

●

High foward current transfer ratio hFE.

●

Low collector to emitter saturation voltage V

●

High emitter to base voltage V

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

.

EBO

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

Ratings

50
40
15

100

50
400
150

–55 ~ +150

Unit: mm

6.9±0.1

0.7 4.0

0.15

.

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

123

Unit

V
V

V
mA
mA

mW

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

2.5±0.1

1.05
±0.05

1:Emitter
2:Collector
3:Base
MT1 Type Package

1.0

0.85

(1.45)

0.8

0.8

–0.05

+0.1

0.45

2.5±0.1

3.5±0.114.5±0.5

˚C
˚C

1.2±0.1

0.45

0.65
max.

+

0.1

–

0.05

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

Noise voltage

*

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

NV

Rank R S T

h

FE

400 ~ 800 600 ~ 1200 1000 ~ 2000

Conditions

VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*

VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

min

50
40
15

400

typ

0.05
200

80

max

100

1

2000

0.2

Unit

nA
µA

V
V
V

V

MHz

mV

1

Transistor

2SD1995

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

1 10 100 10003 30 300

25˚C

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

160

140

)

120

mA

(

C

100

80

60

40

Collector current I

20

0

012108264

I

Collector to emitter voltage VCE (V

hFE — I

C

1000

FE

800

600

400

200

Ta=75˚C

VCE=10V

25˚C

–25˚C

Forward current transfer ratio h

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

Ta=25˚C

=100µA

B

90µA
80µA

70µA
60µA

50µA
40µA
30µA

20µA
10µA

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

250

)

200

MHz

(

T

150

100

50

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

25˚C

Ta=75˚C

–25˚C

fT — I

E

Emitter current IE (mA

VCE=10V

VCB=10V
Ta=25˚C

)

)

Cob — V

8

)
pF

7

(

ob

6

5

4

3

2

1

Collector output capacitance C

0

1 3 10 30 100

CB

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)
mV

(

Noise voltage NV

)

NV — I

C

100

VCE=10V
G

=80dB

V

Function=FLAT
Ta=25˚C

80

60

40

20

0

1 3 10 30 100

Rg=100kΩ

22kΩ

5kΩ

Collector current IC (mA

NV — V

100

80

)
mV

(

60

40

Noise voltage NV

20

)

Rg=100kΩ

0

1 3 10 30 100

Collector to emitter voltage VCE (V

22kΩ

5kΩ

CE

IC=1mA

=80dB

G

V

Function=FLAT
Ta=25˚C

)