Panasonic 2SD1995 Datasheet

Transistor
2SD1995
Silicon NPN epitaxial planer type
For low-frequency amplification
Features
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage V
High emitter to base voltage V
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
.
EBO
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
Ratings
50 40 15
100
50 400 150
–55 ~ +150
Unit: mm
6.9±0.1
0.7 4.0
0.15
.
0.65 max.
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
123
Unit
V V
V mA mA
mW
Note: In addition to the
lead type shown in the upper figure, the type as shown in the lower figure is also available.
2.5±0.1
1.05 ±0.05
1:Emitter 2:Collector 3:Base MT1 Type Package
1.0
0.85
(1.45)
0.8
0.8
–0.05
+0.1
0.45
2.5±0.1
3.5±0.114.5±0.5
˚C ˚C
1.2±0.1
0.45
0.65 max.
+
0.1
0.05
(HW type)
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
Noise voltage
*
hFE Rank classification
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
NV
Rank R S T
h
FE
400 ~ 800 600 ~ 1200 1000 ~ 2000
Conditions
VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0
*
VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT
min
50 40 15
400
typ
0.05 200
80
max
100
1
2000
0.2
Unit
nA µA
V V V
V
MHz
mV
1
Transistor
2SD1995
PC — Ta IC — V
500
) mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
1 10 100 10003 30 300
25˚C
Collector current IC (mA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012108264
I
Collector to emitter voltage VCE (V
hFE — I
C
1000
FE
800
600
400
200
Ta=75˚C
VCE=10V
25˚C
–25˚C
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (mA
Ta=25˚C
=100µA
B
90µA 80µA
70µA 60µA
50µA 40µA 30µA
20µA 10µA
)
120
100
) mA
(
80
C
60
40
Collector current I
20
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
250
)
200
MHz
(
T
150
100
50
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
IC — V
BE
25˚C
Ta=75˚C
–25˚C
fT — I
E
Emitter current IE (mA
VCE=10V
VCB=10V Ta=25˚C
)
)
Cob — V
8
) pF
7
(
ob
6
5
4
3
2
1
Collector output capacitance C
0
1 3 10 30 100
CB
Collector to base voltage VCB (V
2
IE=0 f=1MHz Ta=25˚C
) mV
(
Noise voltage NV
)
NV — I
C
100
VCE=10V G
=80dB
V
Function=FLAT Ta=25˚C
80
60
40
20
0
1 3 10 30 100
Rg=100k
22k
5k
Collector current IC (mA
NV — V
100
80
) mV
(
60
40
Noise voltage NV
20
)
Rg=100k
0
1 3 10 30 100
Collector to emitter voltage VCE (V
22k
5k
CE
IC=1mA
=80dB
G
V
Function=FLAT Ta=25˚C
)
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