Panasonic 2SD1994A Datasheet

Transistors

2SD1994A

Silicon NPN epitaxial planer type

For low-frequency power amplification and driver amplification

Complementary to 2SB1322A

■ Features

• Low collector to emitter saturation voltage

• Output of 2 W to 3 W is obtained with a complementary pair with

2SB1322A

• Allowing supply with the radial taping

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation
Junction temperature T
Storage temperature T

Note)*: Printed circuit board: Copper foil area of 1 cm2 or more, and the

board thickness of 1.7 mm for the collector portion

CBO

CEO

EBO

CP

C

*

P

C

j

stg

V

CE(sat)

60 V
50 V

5V

1.5 A
1A
1W

150 °C

−55 to +150 °C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

−0.05

2.5±0.5 2.5±0.5

Note) In addition to the

lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.

1.2±0.1

+

0.1

0.45

−

0.05

1.05
±0.05 (1.45)

0.21.01.0

+0.1

−0.05

321

0.45

1: Emitter
2: Collector
3: Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW Type)

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

1

Forward current transfer ratio

*

Collector to emitter saturation voltage
Base to emitter saturation voltage

1

Transition frequency

*

1

*

*

1

CBO

CBO

CEO

EBO

h

FE1

h

FE2

V

CE(sat)IC

V

BE(sat)IC

f

Collector output capacitance C

Note)*1: Pulse measurement

2: Rank classification

*

Rank Q R S No-rank

h

FE1

85 to 170 120 to 240 170 to 340 85 to 340

Product of no-rank is not classified and have no indication for rank.

VCB = 20 V, IE = 0 0.1 µA
IC = 10 µA, IE = 060V
IC = 2 mA, IB = 050V
IE = 10 µA, IC = 05V

2

*

VCE = 10 V, IC = 500 mA 85 340
VCE = 5 V, IC = 1 A 50 100

= 500 mA, IB = 50 mA 0.2 0.4 V
= 500 mA, IB = 50 mA 0.85 1.2 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF

ob

1

2SD1994A Transistors

PC  T

1.2

)

1.0

W

(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.03

Copper plate at the collector
is more than 1 cm

1.7 mm in thickness

Ambient temperature Ta (°C

V

 I

CE(sat)

25°C

Ta = 100°C

−25°C

0.1 0.3 1 3 10

Collector current IC (A

a

C

2

in area,

IC / IB = 10

)

IC  V

1.50

1.25

)
A

(

1.00

C

0.75

0.50

Collector current I

0.25

0

01024 86

)

Collector to emitter voltage VCE (V

V

100

)
V

(

30

BE(sat)

10

3

Ta = −25°C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.03

Collector current IC (A

CE

= 25°C

T

a

IB = 10 mA

9 mA
8 mA
7 mA
6 mA
5 mA

4 mA

3 mA

2 mA

1 mA

 I

BE(sat)

25°C

0.1 0.3 1 3 10

C

IC / IB = 10

100°C

)

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

012210486

)

500

FE

400

300

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

IC  I

B

Base current IB (mA

h

 I

FE

C

Ta = 100°C

25°C

−25°C

Collector current IC (A

VCE = 10 V

= 25°C

T

a

)

VCE = 10 V

)

fT  I

200

VCB = 10 V
T

= 25°C

a

180

)

160

MHz

(

140

T

120

100

80

60

40

Transition frequency f

20

0

−1 −3 −10 −30 −100−2 −20−5 −50

Emitter current IE (mA

2

C

E

)

60

)
pF

50

(

ob

40

30

20

10

Collector output capacitance C

0

1

Collector to base voltage VCB (V

 V

ob

CB

IE = 0
f = 1 MHz

= 25°C

T

a

3 10 30 100

)

120

)
V

(

100

CER

80

60

40

20

Collector to emitter voltage V

0

0.1 0.3 1 3 10 30 100

V

 R

CER

BE

IC = 10 mA
T

a

= 25°C

Base to emitter resistance RBE (kΩ

)