Panasonic 2SD1992A Datasheet

Transistors

2SD1992A

Silicon NPN epitaxial planer type

For general amplification

Complementary to 2SB1321A

■ Features

• Low collector to emitter saturation voltage

• Allowing supply with the radial taping

V

CE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T

CBO

CEO

EBO

CP

C

C

j

stg

60 V
50 V

7V

1A
500 mA
600 mW
150 °C

−55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio h

Collector to emitter saturation voltage

1

*

CBO

I

CEO

CBO

CEO

EBO

FE1

h

FE2

V

CE(sat)IC

Transition frequency f
Collector output capacitance C

Note)*1: Pulse measurement

2: Rank classification

*

Rank Q R S No-rank

h

FE1

85 to 170 120 to 240 170 to 340 85 to 340

Product of no-rank is not classified and have no indication for rank.

VCB = 20 V, IE = 0 0.1 µA
VCE = 20 V, IB = 01µA
IC = 10 µA, IE = 060V
IC = 2 mA, IB = 050V
IE = 10 µA, IC = 07V

2

*

VCE = 10 V, IC = 10 mA 85 340

1

*

VCE = 10 V, IC = 500 mA 40 90

= 300 mA, IB = 30 mA 0.35 0.6 V

VCB = 10 V, IE = −10 mA, f = 200 MHz 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF

ob

6.9±0.1

0.7 4.0

0.15

0.65 max.

+0.1

0.45

−0.05

2.5±0.5 2.5±0.5

123

Note) In addition to the

lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.

1.2±0.1

+

0.1

0.45

−

0.05

1.05
±0.05

1.0

0.85

+0.1

−0.05

0.45

1: Emitter
2: Collector
3: Base
MT1 Type Package

0.65
max.

2.5±0.1

2.5±0.1

Unit: mm

(1.45)

0.8

0.8

3.5±0.114.5±0.5

(HW Type)

1

2SD1992A Transistors

PC  T

800

)

700

mW

(

600

C

500

400

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

0.03

0.01

Collector to emitter saturation voltage V

100

30

10

3

1

0.3

0.1

0.01

CE(sat)

Ta = 75°C

25°C

−25°C

0.1 1 10

0.03 0.3 3

Collector current IC (A

a

C

IC / IB = 10

)

IC  V

800

700

)
mA

(

Collector current I

)

IB = 10 mA

600

C

500

400

300

200

100

0

02048 1612 1826 1410

Collector to emitter voltage VCE (V

V

100

)
V

(

30

BE(sat)

10

3

Ta = 75°C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.03

Collector current IC (A

CE

Ta = 25°C

9 mA

8 mA

7 mA

6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

 I

BE(sat)

0.1 0.3 1 3 10

C

IC / IB = 10

25°C

−25°C

)

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

010864297531

)

300

250

FE

200

150

100

Forward current transfer ratio h

50

0

0.01

IC  I

B

Base current IB (mA

h

 I

FE

Ta = 75°C

25°C

−25°C

0.1 1 100.03 0.3 3

Collector current IC (A

C

VCE = 10 V

VCE = 10 V

= 25°C

T

a

)

)

fT  I

240

200

)

MHz

(

160

T

120

80

Transition frequency f

40

0

−1 −3 −10 −30 −100

−2 −20−5 −50

Emitter current IE (mA

2

E

VCB = 10 V
T

= 25°C

a

C

 V

ob

12

)
pF

10

(

ob

8

6

4

2

Collector output capacitance C

0

3 10 30 100220550

1

)

Collector to base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

)

120

)
V

(

100

CER

80

60

40

20

Collector to emitter voltage V

0

V

 R

CER

1 3 10 30 100 300 1000

BE

IC = 2 mA
T

a

= 25°C

Base to emitter resistance RBE (kΩ

)