Panasonic 2SD1985A Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1985, 2SD1985A

Silicon NPN triple diffusion planar type

For power amplification
Complementary to 2SB1393 and 2SB1393A

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Low collector to emitter saturation voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1985
2SD1985A
2SD1985

2SD1985A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

60
80
60
80

6
5
3

25

2

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current

2SD1985
2SD1985A
2SD1985

2SD1985A
Emitter cutoff current
Collector to emitter
voltage

2SD1985

2SD1985A

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.

Rank Q P

h

FE1

70 to 150 120 to 250

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCE = 60V, IB = 0
VCE = 80V, IB = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 5V, IC = 0.5A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

min

60
80
70
10

typ

30

0.5

2.5

0.4

max

200
200
300
300

1

250

1.8

1.2

Unit

µA

µA

mA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1985, 2SD1985A

PC—Ta IC—V

40

)
W

(

C

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(1)

(2)

(3)

Ambient temperature Ta (˚C

V

CE(sat)—IC

IC/IB=8

TC=100˚C

25˚C

–25˚C

Collector current IC (A

)

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

012108264

IB=100mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

TC=100˚C

300

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

TC=25˚C

90mA
80mA
70mA
60mA

50mA

40mA

30mA

20mA

10mA

VCE=4V

)

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

25˚C

TC=100˚C

–25˚C

fT —I

C

VCE=5V
f=10MHz
T

Collector current IC (A

V

=25˚C

C

=4V

CE

)

)

Area of safe operation (ASO) R

–10

I

CP

–3

I

C

)

–1

A

(

C

– 0.3

– 0.1

– 0.03

– 0.01

Collector current I

– 0.003

– 0.001

–1 –10 –100 –1000–3 –30 –300

Non repetitive pulse
T

C

DC

10ms

=25˚C

t=1ms

2SD1985

2SD1985A

Collector to emitter voltage VCE (V

10000

)

1000

˚C/W

(
(t)

th

100

10

1

Thermal resistance R

0.1

–4

10

)

Note: Rth was measured at Ta=25˚C and under natural convection.

–3

10

2

—t

th(t)

(1) P

=10V × 0.2A (2W) and without heat sink

T

=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink

(2) P

T

–1

–2

10

Time t (s

1010

110

)

2

10

(1)

(2)

3

4

10