Panasonic 2SD1979 Datasheet

Transistor

V

B

IB=1mA

R

on

= ✕1000(Ω)

f=1kHz
V=0.3V

1kΩ

V

A

V

V

VA–V

B

V

B

2SD1979

Silicon NPN epitaxial planer type

For low-voltage output amplification
For muting
For DC-DC converter

Features

■

●

Low ON resistance Ron.

●

High foward current transfer ratio hFE.

●

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

50
20

25
500
300
150
150

–55 ~ +150

Unit

V
V

V
mA
mA

mW

˚C
˚C

2.1±0.1

1.25±0.1 0.4250.425

1

1.3±0.10.9±0.1

2.0±0.2

0.650.2 0.65

2

0.7±0.1

0.2±0.1

0 to 0.1

1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package

Marking symbol : 3W

3

Unit: mm

–0

+0.1

0.3

–0.05

+0.1

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
ON resistanse

*1

hFE Rank classification

Rank S T

h

FE

Marking Symbol 3WS 3WT

Symbol

I

CBO

I

EBO

V

CEO

*1

h

FE

V

CE(sat)

V

BE

f

T

C

ob

*2

R

on

500 ~ 1500 800 ~ 2500

Conditions

VCB = 50V, IE = 0
VEB = 25V, IC = 0
IC = 1mA, IB = 0
VCE = 2V, IC = 4mA
IC = 30mA, IB = 3mA
VCE = 2V, IC = 4mA
VCB = 6V, IE = –4mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

*2

Ron Measurement circuit

min

20

500

typ

0.6
80

4.5

1.0

max

1
1

2500

0.1

Unit

µA
µA

V

V
V

MHz

pF

Ω

1

Transistor

2SD1979

PC — Ta IC — V

240

)

mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

10

V

(

3

CE(sat)

1

0.3

0.1
Ta=75˚C

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

–25˚C

Collector current IC (mA

)

C

IC/IB=10

)

CE

24

20

)
mA

(

16

C

12

8

Collector current I

4

0

012108264

IB=10µA

Collector to emitter voltage VCE (V

hFE — I

C

2400

FE

2000

1600

1200

800

400

Forward current transfer ratio h

Ta=75˚C

25˚C

–25˚C

0

1 10 100 10003 30 300

Collector current IC (mA

Ta=25˚C

9µA
8µA
7µA
6µA

5µA
4µA
3µA
2µA

1µA

VCE=2V

)

120

100

)
mA

80

(

B

60

40

Base current I

20

0

01.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

120

)

100

MHz

(

T

80

60

40

20

Transition frequency f

0

–1 –3 –10 –30 –100

IC — V

BE

25˚C

Ta=75˚C

fT — I

–25˚C

E

VCB=6V
Ta=25˚C

Emitter current IE (mA

VCE=2V

)

)

Cob — V

12

)

pF

(

10

ob

8

6

4

2

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

f=1MHz
I

=0

E

Ta=25˚C

)