Panasonic 2SD1975 Datasheet

Po wer Transistors

2SD1975, 2SD1975A

Silicon NPN triple diffusion planar type

For high power amplification
Complementary to 2SB1317 and 2SB1317A

Features

■

●

Satisfactory foward current transfer ratio hFE collector current I
characteristics

●

Wide area of safe operation (ASO)

●

High transition frequency f

●

Optimum for the output stage of a HiFi audio amplifier

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

2SD1975
2SD1975A
2SD1975
2SD1975A

TC=25°C
Ta=25°C

T

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

=25˚C)

C

Ratings

180
200
180
200

5
25
15

150

3.5

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

Unit: mm

20.0±0.5

C

6.010.0

26.0±0.520.0±0.5

1.5

2.5

1.5

Solder Dip

10.9±0.5

123

φ 3.3±0.2

4.02.0

2.0±0.3

3.0±0.3

1.0±0.2

5.45±0.3

5.0±0.3

3.0

3.0

2.0

1.5

2.7±0.3

0.6±0.2

1:Base
2:Collector
3:Emitter

TOP–3L Package

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD1975
2SD1975A

Emitter cutoff current

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE2

Rank Q S P

h

FE2

60 to 120 80 to 160 100 to 200

C

Symbol

I

CBO

I

EBO

h

FE1

*

h

FE2

h

FE3

V

BE

V

CE(sat)

f

T

C

ob

=25˚C)

Conditions

VCB = 180V, IE = 0
VCB = 200V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
VCE = 5V, IC = 8A
IC = 10A, IB = 1A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz

min

20
60
20

typ

20

200

max

50
50
50

200

1.8

2.5

Unit

µA

µA

V
V

MHz

pF

1

Po wer Transistors 2SD1975, 2SD1975A

PC—Ta IC—V

200

)
W

(

C

(1)

150

100

50

Collector power dissipation P

(2)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

10

V

(

3

CE(sat)

1

0.3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=3.5W)

(P

C

(3)

V

CE(sat)—IC

TC=100˚C

IC/IB=10

25˚C

–25˚C

CE

24

20

)
A

(

16

C

12

8

IB=1000mA

800mA

700mA

600mA

500mA

400mA

T

C

300mA

200mA

=25˚C

100mA

Collector current I

4

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

C

1000

FE

300

TC=100˚C

25˚C

100

–25˚C

30

)

VCE=5V

24

20

)
A

(

16

C

12

8

Collector current I

4

0

04132

1000

)

300

MHz

(

T

100

30

IC—V

BE

VCE=5V

25˚C

TC=–25˚C

100˚C

Base to emitter voltage VBE (V

fT—I

C

VCE=10V
f=1MHz
T

=25˚C

C

)

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

CB

)

IE=0
f=1MHz

=25˚C

T

C

Collector current IC (A

10000

)
pF

(

3000

ob

1000

300

100

30

Cob—V

Collector output capacitance C

10

1 3 10 30 100

Collector to base voltage VCB (V

10

3

Forward current transfer ratio h

1

0.1 1 10 1000.3 3 30

Collector current IC (A

Area of safe operation (ASO)

100

I

CP

30

)

I

10

C

A

(

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

100ms

)

Non repetitive pulse

=25˚C

T

C

t=10ms

DC

2SD1975

2SD1975A

10

3

Transition frequency f

1

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

)

2