Panasonic 2SD1964 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1964

Silicon NPN epitaxial planar type

For power switching

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory linearity of foward current transfer ratio h

●

Large collector current I

●

Full-pack package which can be installed to the heat sink with

C

one screw

CE(sat)

Unit: mm

FE

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

90 to 180 130 to 260

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

h

FE3

V

CE(sat)1

V

CE(sat)2

V

BE(sat)1

V

BE(sat)2

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

130

80

7
25
15
50

2

150

–55 to +150

=25˚C)

Unit

V
V
V
A
A

W

˚C
˚C

Conditions

VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
VCE = 2V, IC = 8A
IC = 7A, IB = 0.35A
IC = 15A, IB = 1.5A
IC = 7A, IB = 0.35A
IC = 15A, IB = 1.5A
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 7A, IB1 = 0.7A, IB2 = – 0.7A,
VCC = 50V

TO–220 Full Pack Package(a)

min

typ

80
45
90
30

20

0.5

2.0

0.2

max

10
50

260

0.5

1.5

1.5

2.5

1:Base
2:Collector
3:Emitter

Unit

µA
µA

V

V
V
V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1964

PC—Ta IC—V

60

)

(1)

W

(

50

C

40

30

20

(2)

10

(3)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 100.3 3

Collector current IC (A

V

CE(sat)—IC

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

(4)

IC/IB=10

TC=100˚C

25˚C

–25˚C

)

)

CE

20

IB=300mA

16

)
A

(

C

12

8

Collector current I

4

0

012108264

200mA

TC=25˚C

140mA

100mA

80mA

60mA

40mA

20mA

Collector to emitter voltage VCE (V

V

BE(sat)—IC

100

)
V

(

30

BE(sat)

10

3

TC=–25˚C

1

25˚C

100˚C

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

I

C/IB

)

=10

V

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 100.3 3

)

CE(sat)—IC

Collector current IC (A

hFE—I

1000

FE

300

100

30

10

3

Forward current transfer ratio h

1

0.1 301010.3 3

TC=100˚C

25˚C

–25˚C

Collector current IC (A

C

(1) IC/IB=10

=20

(2) I

C/IB

T

=25˚C

C

(2)

)

VCE=10V

)

(1)

fT—I

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

2

ton, t

C

VCE=10V
f=1MHz

=25˚C

T

C

)

10

)

3

µs

(

f

,t

1

stg

,t

on

0.3

0.1

Switching time t

0.03

0.01
082647153

Collector current IC (A

, tf — I

stg

C

t

stg

t

on

t

f

Pulsed tw=1ms
Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

)

Area of safe operation (ASO)

100

I

CP

30

)

I

10

C

A

(

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

10ms

DC

Non repetitive pulse

=25˚C

T

C

t=1ms

)