Panasonic 2SD1823 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1823

Silicon NPN epitaxial planar type

For low-frequency amplification

■ Features

• High forward current transfer ratio h

• Low collector-emitter saturation voltage V

• High emitter-base voltage (Collector open) V

• Low noise voltage NV

• S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga­zine packing.

FE

CE(sat)

EBO

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

50 V

40 V

15 V

50 mA

100 mA

150 mW

150 °C

−55 to +150 °C

+0.1

0.3

–0.0

132

(0.65)

(0.65)

1.3

±0.1

2.0

±0.2

10°

Marking symbol: 1Z

0.15

(0.425)

±0.10

±0.1

2.1

1.25

5°

+0.2

–0.1

±0.1

0.9

0.9

0 to 0.1

SMini3-G1 Package

Unit: mm

+0.10
–0.05

1: Base
2: Emitter
3: Collector

EIAJ: SC-70

±0.1

0.2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

h

FE

CE(sat)IC

Transition frequency f

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S T

h

FE

Publication date: April 2003 SJC00229BED

400 to 800 600 to 1 200 1 000 to 2 000

= 10 µA, IE = 050V

= 1 mA, IB = 040V

= 10 µA, IC = 015V

VCB = 20 V, IE = 0 0.1 µA

VCE = 20 V, IB = 01µA

VCE = 10 V, IC = 2 mA 400 2 000 

= 10 mA, IB = 1 mA 0.05 0.20 V

VCB = 10 V, IE = −2 mA, f = 200 MHz 120 MHz

T

1

2SD1823

This product complies with the RoHS Directive (EU 2002/95/EC).

200

PC  T

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

100

10

1

0.1

CE(sat)

25°C

a

C

IC / IB = 10

Ta = 75°C

−25°C

IC  V

hFE  I

Ta = 75°C

−25°C

CE

25°C

Ta = 25°C

IB = 100 µA

C

VCE = 10 V

90 µA
80 µA
70 µA
60 µA

50 µA

40 µA

30 µA

20 µA

10 µA

)

160

)

120

mA

(

C

80

40

Collector current I

0

)

012108264

Collector-emitter voltage VCE (V

1 800

1 500

FE

1 200

900

600

Forward current transfer ratio h

300

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

0 2.01.60.4 1.20.8

250

)

200

MHz

(

T

150

100

50

Transition frequency f

IC  V

BE

VCE = 10 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

E

VCB = 10 V
T

= 25°C

a

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

Cob  V

8

(pF)

ob

C

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

0.1 1 10 100

Collector current IC (mA

)

0

− 0.1 −1 −10 −100

Emitter current IE (mA

)

)

SJC00229BED