Panasonic 2SD1821G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SD1821G

Silicon NPN epitaxial planar type

For high breakdown voltage low-frequency and low-noise

amplification

■ Features

• High collector-emitter voltage (Base open) V

• Low noise voltage NV

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

CEO

■ Package

•

Code
SMini3-F2

•

Marking Symbol: L

•

Pin Name

1: Base
2: Emitter

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

185 V

185 V

5V

50 mA

100 mA

150 mW

150 °C

3: Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Noise voltage NV V

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

*

130 to 220 185 to 330

CEOIC

EBOIE

I

CBO

h

FE

CE(sat)IC

= 100 µA, IB = 0 185 V

= 10 µA, IC = 05V

VCB = 100 V, IE = 01µA

VCE = 5 V, IC = 10 mA 130 330 

= 30 mA, IB = 3 mA 1 V

VCB = 10 V, IE = −10 mA, f = 200 MHz 150 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF

ob

= 10 V, IC = 1 mA, GV = 80 dB 150 mV

CE

Rg = 100 kΩ, Function = FLAT

Publication date: May 2007 SJC00374AED

1

2SD1821G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

240

)

200

mW
(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)

V

(

CE(sat)

100

10

1

0.1

CE(sat)

25°C

a

C

IC / IB = 10

Ta = 75°C

−25°C

IC  V

hFE  I

Ta = 75°C

CE

C

25°C

−25°C

Ta = 25°C

= 2.0 mA

I

B

1.8 mA

1.6 mA

1.4 mA

1.2 mA

1.0 mA

0.8 mA

0.6 mA

0.4 mA

0.2 mA

VCE = 10 V

)

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

012108264

)

Collector-emitter voltage VCE (V

600

500

FE

400

300

200

Forward current transfer ratio h

100

120

100

)

mA
(

80

C

60

40

Collector current I

20

0

0 2.01.60.4 1.20.8

200

)

160

MHz
(

T

120

80

40

Transition frequency f

IC  V

BE

VCE = 10 V

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

fT  I

E

VCB = 10 V

= 25°C

T

a

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

Cob  V

5

(pF)

ob

C

4

3

2

1

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

0.1 1 10 100

Collector current IC (mA

)

0

−1 −10 −100

Emitter current IE (mA

)

)

SJC00374AED