Panasonic 2SD1821A, 2SD1821 Datasheet

Transistor

2.1±0.1

1.3±0.10.9±0.1

0.7±0.1

0.3

+0.1

–0

0.15

+0.1

–0.05

2.0±0.2

1.25±0.1 0.4250.425

1

3

2

0.650.2 0.65

0 to 0.1

0.2±0.1

2SD1821, 2SD1821A

Silicon NPN epitaxial planer type

For high breakdown voltage low-frequency and low-noise
amplification

Features

■

●

High collector to emitter voltage V

●

Low noise voltage NV.

●

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1821
2SD1821A
2SD1821

2SD1821A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

150
185
150
185

100

50
150
150

Unit

V

V

5

V
mA
mA

mW

˚C
˚C

1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package

Marking symbol : P

(2SD1821)

(2SD1821A)

L

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to emitter
voltage

2SD1821

2SD1821A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Noise voltage

*

hFE Rank classification

Marking
Symbol

Rank R S

h

FE

130 ~ 220 185 ~ 330
2SD1821 PR PS
2SD1821A LR LS

Symbol

I

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

C

ob

NV

Conditions

VCB = 100V, IE = 0

IC = 100µA, IB = 0

IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

min

150
185

5

130

typ

150

2.3

150

max

1

330

1

Unit

µA

V

V

V

MHz

pF

mV

1

Transistor

2SD1821, 2SD1821A

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

120

100

)

mA

(

80

C

60

40

Collector current I

20

0

0164128142106

=2.0mA

I

B

Collector to emitter voltage VCE (V

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

IC — V

BE

VCE=10V

25˚C

Ta=75˚C

fT — I

–25˚C

E

VCB=10V
Ta=25˚C

Emitter current IE (mA

)

)

)
pF

(

Cob — V

5

4

ob

3

2

1

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)