Panasonic 2SD1820G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SD1820G

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SB1219G

■ Features

• Low collector-emitter saturation voltage V

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

CE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

60 V

50 V

5V

500 mA

1A

150 mW

150 °C

−55 to +150 °C

■ Package

•

Code
SMini3-F2

•

Marking Symbol: X

•

Pin Name

1: Base
2: Emitter
3: Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

1

Forward current transfer ratio

*

Collector-emitter saturation voltage

1

Transition frequency

*

1

*

CBOIC

CEOIC

EBOIE

I

CBO

h

FE1

h

FE2

V

CE(sat)IC

f

Collector output capacitance C

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement
2: Rank classification

*

Rank Q R S No-rank

h

FE1

85 to 170 120 to 240 170 to 340 85 to 340

Marking symbol XQ XR XS X

Product of no-rank is not classified and have no marking symbol for rank.

= 10 µA, IE = 060V

= 2 mA, IB = 050V

= 10 µA, IC = 05V

VCB = 20 V, IE = 0 0.1 µA

2

*

VCE = 10 V, IC = 150 mA 85 340 

VCE = 10 V, IC = 500 mA 40

= 300 mA, IB = 30 mA 0.35 0.60 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF

ob

Publication date: May 2007 SJC00373AED

1

2SD1820G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

240

)

200

mW
(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

a

Ambient temperature Ta (°C

V

 I

100

)
V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.01 0.1 1 10

CE(sat)

Ta = 75°C

25°C

Collector current IC (A

C

IC / IB = 10

−25°C

)

IC  V

IB = 10 mA

9 mA

8 mA

BE(sat)

25°C

75°C

CE

7 mA

6 mA

 I

5 mA

4 mA

C

Ta = 25°C

3 mA

2 mA

1 mA

IC / IB = 10

)

800

700

)

600

mA
(

C

500

400

300

200

Collector current I

100

0

0108264

300

250

FE

200

150

100

Forward current transfer ratio h

50

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

020164128

)

Collector-emitter voltage VCE (V

V

100

)

V

(

BE(sat)

10

Ta = −25°C

1

0.1

IC  I

Base current IB (mA

hFE  I

Ta = 75°C

25°C

−25°C

B

C

VCE = 10 V

= 25°C

T

a

)

VCE = 10 V

Base-emitter saturation voltage V

0.01

0.01 0.1 1 10

Collector current IC (A

)

0

0.01 0.1 1 10

Collector current IC (A

)

fT  I

240

200

)

MHz
(

160

T

120

80

Transition frequency f

40

0

−1 −10 −100

Emitter current IE (mA

2

E

VCB = 10 V
T

= 25°C

a

Cob  V

12

(pF)

ob

10

C

8

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

)

1 10 100

Collector-base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-emitter voltage

)

120

100

(V)

CER

V

80

60

40

20

(Resistor between B and E)

0

V

 R

CER

1101001000

Base-emitter resistance RBE (kΩ

BE

IC = 2 mA
T

= 25°C

a

)

SJC00373AED