Panasonic 2SD1820 Datasheet

Transistor

2.1±0.1

1.3±0.10.9±0.1

0.7±0.1

0.3

+0.1

–0

0.15

+0.1

–0.05

2.0±0.2

1.25±0.1 0.4250.425

1

3

2

0.650.2 0.65

0 to 0.1

0.2±0.1

2SD1820, 2SD1820A

Silicon NPN epitaxial planer type

For general amplification
Complementary to 2SB1219 and 2SB1219A

Features

■

●

Low collector to emitter saturation voltage V

●

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1820
2SD1820A
2SD1820

2SD1820A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

30
60
25
50

500
150
150

–55 ~ +150

5
1

CE(sat)

.

Unit

V

V

V
A

mA

mW

˚C
˚C

1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package

Marking symbol : W

(2SD1820)

(2SD1820A)

X

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage

2SD1820
2SD1820A
2SD1820
2SD1820A

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Marking
Symbol

Rank Q R S

h

FE1

85 ~ 170 120 ~ 240 170 ~ 340
2SD1820 WQ WR WS
2SD1820A XQ XR XS

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

CE(sat)

f

T

C

ob

Conditions

VCB = 20V, IE = 0

IC = 10µA, IE = 0

IC = 2mA, IB = 0

IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 10V, IC = 500mA
IC = 300mA, IB = 30mA

*2

*2

*2

VCB = 10V, IE = –50mA*2, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

30
60
25
50

5
85
40

typ

160

max

340

0.35
200

6

*2

Pulse measurement

0.1

0.6

15

Unit

µA

V

V

V

V

MHz

pF

1

Transistor

2SD1820, 2SD1820A

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

)

C

IC/IB=10

)

CE

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

020164128

IB=10mA

9mA

8mA

7mA

6mA

Ta=25˚C

5mA

4mA

3mA

2mA

1mA

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

Ta=–25˚C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

25˚C

Collector current IC (A

C

IC/IB=10

75˚C

)

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

0108264

)

Base current IB (mA

hFE — I

300

FE

250

Ta=75˚C

200

150

100

Forward current transfer ratio h

25˚C

–25˚C

50

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC — I

B

VCE=10V
Ta=25˚C

)

C

VCE=10V

)

fT — I

E

240

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

VCB=10V
Ta=25˚C

)

)
pF

(

Cob — V

12

10

ob

8

6

4

2

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

IE=0
f=1MHz
Ta=25˚C

120

)
V

(

100

CER

80

60

40

20

Collector to emitter voltage V

0

1 10 100 10003 30 300

)

Base to emitter resistance RBE (kΩ

V

— R

CER

BE

2SD1820A

2SD1820

IC=2mA
Ta=25˚C

)