Panasonic 2SD1819G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SD1819G

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SB1218G

■ Features

• High forward current transfer ratio h

• Low collector-emitter saturation voltage V

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape pacing and the magazine
pacing.

FE

CE(sat)

■ Package

•

Code
SMini3-F2

•

Marking Symbol: Z

•

Pin Name

1: Base
2: Emitter

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

60 V

50 V

7V

100 mA

200 mA

150 mW

150 °C

3: Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S No rank

h

FE1

Marking symbol ZQ ZR ZS Z

Product of no-rank is not classified and have no marking symbol for rank.

160 to 260 210 to 340 290 to 460 160 to 460

CBOIC

CEOIC

EBOIE

I

CBO

I

CEO

FE1

h

FE2

CE(sat)IC

= 10 µA, IE = 060V

= 2 mA, IB = 050V

= 10 µA, IC = 07V

VCB = 20 V, IE = 0 0.1 µA

VCE = 10 V, IB = 0 100 µA

*

VCE = 10 V, IC = 2 mA 160 460 

VCE = 2 V, IC = 100 mA 90

= 100 mA, IB = 10 mA 0.1 0.3 V

VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF

ob

Publication date: May 2007 SJC00372AED

1

2SD1819G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

I

 V

200

160

)

mA
(

C

120

80

Collector current I

40

0

0 2.01.60.4 1.20.8

C

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

a

BE

)

VCE = 10 V

)

60

50

)

mA
(

40

C

30

20

Collector current I

10

0

0108264

Collector-emitter voltage VCE (V

IC  I

240

VCE = 10 V

= 25°C

T

a

200

)

mA
(

160

C

120

80

Collector current I

40

0

0 1 000800200 600400

Base current IB (µA

IC  V

CE

IB = 160 µA

B

Ta = 25°C

140 µA

120 µA

100 µA

80 µA

60 µA

40 µA

20 µA

)

IB  V

CE(sat)

25°C

BE

 I

VCE = 10 V

= 25°C

T

a

C

IC / IB = 10

Ta = 75°C

−25°C

)

)

1 200

1 000

)

800

µA
(

B

600

400

Base current I

200

0

0 1.00.80.2 0.60.4

)

Base-emitter voltage VBE (V

V

100

)
V

(

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.1 1 10 100

Collector current IC (mA

hFE  I

600

500

FE

400

300

200

Forward current transfer ratio h

100

0

0.1 1 10 100

Ta = 75°C

Collector current IC (mA

2

C

25°C

−25°C

VCE = 10 V

)

fT  I

300

)

240

MHz
(

T

180

120

60

Transition frequency f

0

− 0.1 −1 −10 −100

E

VCB = 10 V

= 25°C

T

a

Emitter current IE (mA

SJC00372AED

)