This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1819G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1218G
■ Features
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape pacing and the magazine
pacing.
FE
CE(sat)
■ Package
•
Code
SMini3-F2
•
Marking Symbol: Z
•
Pin Name
1: Base
2: Emitter
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
60 V
50 V
7V
100 mA
200 mA
150 mW
150 °C
3: Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S No rank
h
FE1
Marking symbol ZQ ZR ZS Z
Product of no-rank is not classified and have no marking symbol for rank.
160 to 260 210 to 340 290 to 460 160 to 460
CBOIC
CEOIC
EBOIE
I
CBO
I
CEO
FE1
h
FE2
CE(sat)IC
= 10 µA, IE = 060V
= 2 mA, IB = 050V
= 10 µA, IC = 07V
VCB = 20 V, IE = 0 0.1 µA
VCE = 10 V, IB = 0 100 µA
*
VCE = 10 V, IC = 2 mA 160 460
VCE = 2 V, IC = 100 mA 90
= 100 mA, IB = 10 mA 0.1 0.3 V
VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF
ob
Publication date: May 2007 SJC00372AED
1
2SD1819G
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
200
)
mW
160
(
C
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
I
V
200
160
)
mA
(
C
120
80
Collector current I
40
0
0 2.01.60.4 1.20.8
C
25°C
Ta = 75°C
−25°C
Base-emitter voltage VBE (V
a
BE
)
VCE = 10 V
)
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
0108264
Collector-emitter voltage VCE (V
IC I
240
VCE = 10 V
= 25°C
T
a
200
)
mA
(
160
C
120
80
Collector current I
40
0
0 1 000800200 600400
Base current IB (µA
IC V
CE
IB = 160 µA
B
Ta = 25°C
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
)
IB V
CE(sat)
25°C
BE
I
VCE = 10 V
= 25°C
T
a
C
IC / IB = 10
Ta = 75°C
−25°C
)
)
1 200
1 000
)
800
µA
(
B
600
400
Base current I
200
0
0 1.00.80.2 0.60.4
)
Base-emitter voltage VBE (V
V
100
)
V
(
CE(sat)
10
1
0.1
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA
hFE I
600
500
FE
400
300
200
Forward current transfer ratio h
100
0
0.1 1 10 100
Ta = 75°C
Collector current IC (mA
2
C
25°C
−25°C
VCE = 10 V
)
fT I
300
)
240
MHz
(
T
180
120
60
Transition frequency f
0
− 0.1 −1 −10 −100
E
VCB = 10 V
= 25°C
T
a
Emitter current IE (mA
SJC00372AED
)
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
2.00 ±0.20
+0.05
0.30
−0.02
0.425 ±0.050
3
12
(0.65)(0.65)
1.30
±0.10
(5°)
1.25 ±0.10
(0.89)
2.10 ±0.10
±0.10
0.90
(5°)
+0.05
0.13
−0.02
(0.49)
0 to 0.10
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
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(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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