Panasonic 2SD1776A Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1776, 2SD1776A

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Features

■

●

High foward current transfer ratio h

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with

FE

one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1776
2SD1776A
2SD1776

2SD1776A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD1776

2SD1776A
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage

2SD1776

2SD1776A
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time

*

hFE Rank classification

Rank Q P

h

500 to 1000 800 to 1500

FE

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

*

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

t

stg

t

f

=25˚C)

C

Ratings

80

100

60
80

6
4
2

0.5
25

2

150

–55 to +150

=25˚C)

VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0

IC = 25mA, IB = 0

VCE = 4V, IC = 300mA
IC = 1A, IB = 25mA
IC = 1A, IB = 25mA
VCE = 12V, IC = 200mA, f = 10MHz
VCB = 10V, IE = 0, f = 1MHz

IC = 1A, IB1 = 25mA, IB2 = –25mA,
VCC = 50V

FE

Unit

V

V

V
A
A
A

W

˚C
˚C

Conditions

TO–220 Full Pack Package(a)

min

typ

60
80

500

40
30

0.6

2.5
1

max

100
100
100
100

1500

1

1.2

Unit: mm

1:Base
2:Collector
3:Emitter

Unit

µA

µA
µA

V

V
V

MHz

pF

µs
µs
µs

1

Po wer Transistors 2SD1776, 2SD1776A

PC—Ta IC—V

40

)

35

W

(

C

30

25

20

15

10

5

Collector power dissipation P

0

0 15012510025 7550

)
V

(

10

BE(sat)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 310.10.03 0.3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

(1)

(2)

(3)
(4)

=2W)

C

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=40

TC=–25˚C

100˚C

25˚C

Collector current IC (A

)

CE

1.6

1.4

)

1.2

A

(

C

1.0

0.8

0.6

0.4

Collector current I

0.2

0

012108264

)

Collector to emitter voltage VCE (V

IB=3mA

hFE—I

100000

30000

FE

10000

TC=100˚C

3000

25˚C

1000

–25˚C

300

100

Forward current transfer ratio h

30

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

2mA

1mA

C

TC=25˚C

0.8mA

0.6mA

0.4mA

0.2mA

0.1mA

=4V

V

CE

)

)
V

(

10

CE(sat)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

1

0.01 310.10.03 0.3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=12V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=40

–25˚C

)

=25˚C

)

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01

02.52.00.5 1.51.0

Collector current IC (A

2

ton, t

t

stg

t

f

t

on

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=40 (IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

Area of safe operation (ASO)

100

30

)

10

A

(

I

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

2SD1776

2SD1776A

)