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Po wer Transistors
2SD1775, 2SD1775A
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
Features
■
●
High foward current transfer ratio h
●
Satisfactory linearity of foward current transfer ratio h
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1775
2SD1775A
2SD1775
2SD1775A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
hFE Rank classification
Rank Q P
h
500 to 1000 800 to 1500
FE
Symbol
2SD1775
2SD1775A
2SD1775
2SD1775A
V
V
V
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
CEO
EBO
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
*
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
FE
=25˚C)
C
Ratings
80
100
60
80
6
4
2
0.5
25
1.3
150
–55 to +150
=25˚C)
FE
Unit
V
V
V
A
A
A
W
˚C
˚C
Conditions
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 300mA
IC = 1A, IB = 25mA
IC = 1A, IB = 25mA
VCE = 12V, IC = 200mA, f = 10MHz
VCB = 10V, IE = 0, f = 1MHz
IC = 1A, IB1 = 25mA, IB2 = –25mA,
VCC = 50V
10.0±0.310.5min.
10.0±0.3
2.0
4.4±0.5
2.0 1.5±0.1
123
8.5±0.2
6.0±0.5
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
min
60
80
500
1.5max.
0.8±0.1
2.54±0.3
0.8±0.1
2.54±0.3
–0.4
+0
1.5
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
typ
max
1500
40
30
0.6
2.5
1.0
Unit: mm
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
3.0
4.4±0.5
0 to 0.4
Unit
100
100
100
100
µA
µA
µA
V
1.0
1.2
V
V
MHz
pF
µs
µs
µs
14.7±0.5
1
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Po wer Transistors 2SD1775, 2SD1775A
PC—Ta IC—V
40
)
35
W
(
C
30
25
20
15
10
5
Collector power dissipation P
0
0 15012510025 7550
)
V
(
10
BE(sat)
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 310.10.03 0.3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
(1)
(2)
(3)
(4)
=1.3W)
C
Ambient temperature Ta (˚C
V
BE(sat)—IC
IC/IB=40
TC=–25˚C
100˚C
25˚C
Collector current IC (A
)
CE
1.6
1.4
)
1.2
A
(
C
1.0
0.8
0.6
0.4
Collector current I
0.2
0
012108264
)
Collector to emitter voltage VCE (V
IB=3mA
hFE—I
100000
30000
FE
10000
TC=100˚C
3000
25˚C
1000
–25˚C
300
100
Forward current transfer ratio h
30
10
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
2mA
1mA
C
T
0.8mA
0.6mA
0.4mA
0.2mA
0.1mA
C
V
=25˚C
=4V
CE
)
)
V
(
10
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
1000
300
)
MHz
100
(
T
30
10
Transition frequency f
0.3
0.1
V
CE(sat)—IC
3
1
0.01 310.10.03 0.3
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=12V
f=10MHz
T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=40
–25˚C
)
=25˚C
)
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
02.52.00.5 1.51.0
Collector current IC (A
2
ton, t
t
stg
t
f
t
on
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=40 (IB1=–IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
Area of safe operation (ASO)
100
30
)
10
A
(
I
CP
C
3
I
C
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
300ms
Non repetitive pulse
=25˚C
T
C
t=10ms
1ms
2SD1775
2SD1775A
)