Panasonic 2SD1773 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD1773

Silicon NPN triple diffusion planar type Darlington

For midium speed switching
Complementary to 2SB1193

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Collector to base voltage
Emitter to base voltage
Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency
Turn-on time
Storage time
Fall time

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

C

Symbol

I

CBO

I

CEO

V

CEO(sus)

V

EBO

h

FE

V

CE(sat)1

V

CE(sat)2

V

BE(sat)1

V

BE(sat)2

f

T

t

on

t

stg

t

f

FE

=25˚C)

C

Ratings

120
120

7

12

8

50

2

150

–55 to +150

=25˚C)

VCB = 120V, IE = 0
VCE = 100V, IB = 0
IC = 2A, L = 10mH
IE = 50mA, IC = 0
VCE = 3V, IC = 4A
IC = 4A, IB = 8mA
IC = 8A, IB = 80mA
IC = 4A, IB = 8mA
IC = 8A, IB = 80mA
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V

Unit

V
V
V
A
A

W

˚C
˚C

Conditions

TO–220 Full Pack Package(a)

Internal Connection

B

min

120

7

1000

typ

20

0.7

Unit: mm

1:Base
2:Collector
3:Emitter

C

E

max

100

Unit

µA

10

µA

V
V

20000

1.5
3
2

3.5

V
V
V
V

MHz

µs

6
2

µs
µs

1

Po wer Transistors 2SD1773

PC—Ta IC—V

80

)

70

W

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

)

30

V

(

BE(sat)

10

3

1

0.3

Base to emitter saturation voltage V

0.1

0.1 0.3 1 3 10

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=2W)

(P

(1)

(2)

(3)

C

Ambient temperature Ta (˚C

V

BE(sat)—IC

(1) IC/IB=500
(2) I

=250

C/IB

=100

(3) I

C/IB

=25˚C

T

C

(2)

(1)

Collector current IC (A

)

CE

10

8

)
A

(

C

6

4

Collector current I

2

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

30000

FE

10000

TC=100˚C

3000

(3)

1000

300

Forward current transfer ratio h

100

0.1 0.3 1 3 10

–25˚C

25˚C

Collector current IC (A

IB=5mA

C

TC=25˚C

4mA
3mA

2mA

1mA

0.5mA

0.2mA

VCE=3V

)

)
V

(

30

CE(sat)

10

0.3

0.1

Collector to emitter saturation voltage V

)

100

30

)
µs

(

10

f

,t

stg

,t

on

0.3

0.1

Switching time t

0.03

0.01

V

CE(sat)—IC

(1) IC/IB=500
(2) I

=250

C/IB

=100

(3) I

C/IB

=25˚C

T

C

(1)

3

1

0.1 0.3 1 3 10

Collector current IC (A

ton, t

, tf — I

stg

t

stg

3

t

f

1

082647153

Collector current IC (A

C

Pulsed tw=1ms
Duty cycle=1%

=500 (IB1=–IB2)

I

C/IB

V

=50V

CC

=25˚C

T

C

t

on

(2)

(3)

)

)

Area of safe operation (ASO) R

100

30

I

CP

)

10

A

(

I

C

C

3

10ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

Collector to emitter voltage VCE (V

)

2

10

(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink

)
˚C/W

(

10

(t)

th

1

–1

10

Thermal resistance R

–2

10

–3

10

–2

10

2

—t

th(t)

(1)

(2)

–1

110

Time t (s

10 10

)

2

10

3

4

10