Panasonic 2SD1771A, 2SD1771 Datasheet

Po wer Transistors

2SD1771, 2SD1771A

Silicon NPN triple diffusion planar type

For power amplification
For TV vertical deflection output
Complementary to 2SB1191 and 2SB1191A

Features

■

●

High collector to emitter V

●

Large collector power dissipation P

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

2SD1771
2SD1771A
2SD1771
2SD1771A

TC=25°C
Ta=25°C

CEO

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

C

=25˚C)

C

Ratings

200
200
150
180

6
2
1

25

1.3

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

10.0±0.310.5min.

10.0±0.3

2.0

4.4±0.5

2.0 1.5±0.1

123

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

+0

1.5

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

4.4±0.5

0 to 0.4

14.7±0.5

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage

2SD1771
2SD1771A

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE1

Rank Q P

h

FE1

60 to 140 100 to 240

C

Symbol

I

CBO

I

EBO

V

CEO

V

EBO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

C

ob

=25˚C)

Conditions

VCB = 200V, IE = 0
VEB = 4V, IC = 0

IC = 5mA, IB = 0

IE = 0.5mA, IC = 0
VCE = 10V, IC = 100mA
VCE = 10V, IC = 300mA
VCE = 10V, IC = 300mA
IC = 500mA, IB = 50mA
VCE = 10V, IC = 100mA, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz

min

150
180

6
60
50

typ

20
27

max

50
50

240

1
1

Unit

µA
µA

V

V

V
V

MHz

pF

1

Po wer Transistors 2SD1771, 2SD1771A

PC—Ta IC—V

40

)

35

W

(

C

30

25

20

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 310.10.03 0.3

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

=1.3W)

(P

C

(1)

(2)
(3)

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=10

–25˚C

)

CE

1.6

1.4

)

1.2

A

(

C

1.0

0.8

0.6

0.4

Collector current I

0.2

0

02420164128

IB=20mA

10mA

Collector to emitter voltage VCE (V

hFE—I

C

1000

FE

300

100

30

10

Forward current transfer ratio h

TC=100˚C

25˚C

–25˚C

3

1

0.01 310.10.03 0.3

VCE=10V

Collector current IC (A

T

8mA

6mA

=25˚C

C

4mA

2mA
1mA

)

4

)

3

A

(

C

2

1

Collector current I

0

01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

V

25˚C

TC=100˚C

fT —I

–25˚C

C

VCE=10V
f=1MHz
T

=25˚C

C

Collector current IC (A

=10V

CE

)

)

Area of safe operation (ASO) R

100

30

)

10

A

(

C

3

I

CP

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

300ms

1ms

10ms

Non repetitive pulse

=25˚C

T

C

t=0.5ms

2SD1771

Collector to emitter voltage VCE (V

2SD1771A

)

2

10

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

)
˚C/W

(

10

(t)

th

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10