Panasonic 2SD1755 Datasheet

Po wer Transistors

2SD1755

Silicon NPN epitaxial planar type

For power amplification with high forward current transfer ratio

Features

■

●

High forward current transfer ratio hFE which has satisfactory
linearity

●

High emitter to base voltage V

●

I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

EBO

=25˚C)

C

Ratings

100

60
15
12

6
3

15

1.3

150

–55 to +150

Unit

V
V
V
A
A
A

W

˚C
˚C

10.2±0.3

7.2±0.3

+0.3

–0.

10.0

7.2±0.3

7.0±0.3

3.0±0.2

0.8±0.21.0±0.2

4.6±0.4

7.0±0.3

1.1±0.1

123

4.6±0.4

1.1±0.1

0.75±0.1

2.3±0.2

213

2.0±0.2

3.0±0.2

0.75±0.1

2.3±0.2

3.5±0.2

1:Base
2:Collector
3:Emitter
I Type Package

3.5±0.2

1.0 max.

2.5

0.5 max.

1:Base
2:Collector
3:Emitter
I Type Package (Y)

Unit: mm

0.85±0.1

0.4±0.1

Unit: mm

0 to 0.15

0.9±0.1
0 to 0.15

1.01.0

2.5±0.2

2.5±0.2

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

hFE Rank classification

Rank Q P

h

300 to 1200 800 to 2000

FE

Symbol

I

CBO

I

EBO

V

CEO

*

h

FE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 100V, IE = 0
VEB = 15V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
IC = 5A, IB = 0.1A
VCE = 12V, IC = 0.5A, f = 10MHz

IC = 5A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

min

60

300

0.3

typ

50

1.5

0.6

max

100
100

2000

0.5

Unit

µA
µA

V

V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1755

PC—Ta IC—V

20

(1)

(2)

V

BE(sat)—IC

TC=–25˚C

100˚C

(1) TC=Ta
(2) Without heat sink

=1.3W)

(P

C

IC/IB=50

25˚C

)

)
W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

10

)
V

(

3

BE(sat)

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.1 1 100.3 3

Collector current IC (A

CE

6

5

)
A

(

4

C

3

2

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

100000

30000

FE

10000

3000

1000

300

100

Forward current transfer ratio h

30

10

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

–25˚C

Collector current IC (A

=25˚C

T

C

IB=10mA

9mA
8mA

7mA
6mA

5mA
4mA
3mA

2mA

1mA

C

VCE=4V

)

)

10

V

(

CE(sat)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

1

0.1 1 100.3 3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=12V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=50

–25˚C

)

=25˚C

)

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
082647153

Collector current IC (A

, tf — I

stg

t

stg

t

f

t

on

C

Pulsed tw=1ms
Duty cycle=1%

=50(IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

Area of safe operation (ASO)

100

30

I

CP

)

10

A

I

(

C

C

3

300ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

)