Panasonic 2SD1753 Datasheet

Po wer Transistors
2SD1753
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Features
Satisfactory linearity of foward current transfer ratio h
I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Symbol
V V V I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
CEO
EBO
FE
=25˚C)
C
Ratings
200 150
6
2.5 1
0.1
15
1.3
150
–55 to +150
FE
Unit
V V V A A A
W
˚C ˚C
10.2±0.3
7.2±0.3
+0.3
–0.
10.0
7.2±0.3
7.0±0.3
3.0±0.2
0.8±0.21.0±0.2
4.6±0.4
7.0±0.3
1.1±0.1
123
4.6±0.4
1.1±0.1
0.75±0.1
2.3±0.2
213
2.0±0.2
3.0±0.2
0.75±0.1
2.3±0.2
3.5±0.2
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2
1.0 max.
2.5
0.5 max.
1:Base 2:Collector 3:Emitter I Type Package (Y)
Unit: mm
0.85±0.1
0.4±0.1
Unit: mm
0 to 0.15
0.9±0.1 0 to 0.15
1.01.0
2.5±0.2
2.5±0.2
Electrical Characteristics (T
Parameter
Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
*
hFE Rank classification
Rank Q P
h
500 to 1200 800 to 2000
FE
C
Symbol
I
CBO
I
EBO
V
CEO
*
h
FE
V
CE(sat)
f
T
=25˚C)
Conditions
VCB = 200V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.2A IC = 0.5A, IB = 0.02A VCE = 4V, IC = 0.1A, f = 10MHz
min
150 500
typ25max
100 100
2000
1
Unit
µA µA
V
V
MHz
1
Po wer Transistors 2SD1753
PC—Ta IC—V
20
) W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
) V
(
10
BE(sat)
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 310.10.03 0.3
Collector current IC (A
(1) TC=Ta (2) Without heat sink
(1)
(2)
V
BE(sat)—IC
(P
=1.3W)
C
25˚C
IC/IB=25
TC=100˚C
–25˚C
)
CE
0.5
0.4
) A
(
C
0.3
0.2
Collector current I
0.1
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
TC=100˚C
25˚C
1000
Forward current transfer ratio h
–25˚C
300
100
30
10
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
TC=25˚C
IB=400µA
350µA 300µA
250µA
200µA
150µA
100µA
50µA
C
VCE=4V
)
) V
(
10
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
10000
3000
) MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
3
1
0.01 310.10.03 0.3
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=4V f=10MHz T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=25
–25˚C
)
=25˚C
)
Area of safe operation (ASO) R
100
30
)
10
A
(
C
I
CP
3
I
C
1
0.3
0.1
Collector current I
0.03
0.01 1 10 100 10003 30 300
Non repetitive pulse
=25˚C
T
C
10ms
300ms
t=1ms
Collector to emitter voltage VCE (V
)
3
10
) ˚C/W
2
(
10
(t)
th
10
1
Thermal resistance R
–1
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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