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Po wer Transistors
2SD1753
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Features
■
●
High foward current transfer ratio h
●
Satisfactory linearity of foward current transfer ratio h
●
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
CEO
EBO
FE
=25˚C)
C
Ratings
200
150
6
2.5
1
0.1
15
1.3
150
–55 to +150
FE
Unit
V
V
V
A
A
A
W
˚C
˚C
10.2±0.3
7.2±0.3
+0.3
–0.
10.0
7.2±0.3
7.0±0.3
3.0±0.2
0.8±0.21.0±0.2
4.6±0.4
7.0±0.3
1.1±0.1
123
4.6±0.4
1.1±0.1
0.75±0.1
2.3±0.2
213
2.0±0.2
3.0±0.2
0.75±0.1
2.3±0.2
3.5±0.2
1:Base
2:Collector
3:Emitter
I Type Package
3.5±0.2
1.0 max.
2.5
0.5 max.
1:Base
2:Collector
3:Emitter
I Type Package (Y)
Unit: mm
0.85±0.1
0.4±0.1
Unit: mm
0 to 0.15
0.9±0.1
0 to 0.15
1.01.0
2.5±0.2
2.5±0.2
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
hFE Rank classification
Rank Q P
h
500 to 1200 800 to 2000
FE
C
Symbol
I
CBO
I
EBO
V
CEO
*
h
FE
V
CE(sat)
f
T
=25˚C)
Conditions
VCB = 200V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.2A
IC = 0.5A, IB = 0.02A
VCE = 4V, IC = 0.1A, f = 10MHz
min
150
500
typ25max
100
100
2000
1
Unit
µA
µA
V
V
MHz
1
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Po wer Transistors 2SD1753
PC—Ta IC—V
20
)
W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
V
(
10
BE(sat)
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 310.10.03 0.3
Collector current IC (A
(1) TC=Ta
(2) Without heat sink
(1)
(2)
V
BE(sat)—IC
(P
=1.3W)
C
25˚C
IC/IB=25
TC=100˚C
–25˚C
)
CE
0.5
0.4
)
A
(
C
0.3
0.2
Collector current I
0.1
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
TC=100˚C
25˚C
1000
Forward current transfer ratio h
–25˚C
300
100
30
10
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
TC=25˚C
IB=400µA
350µA
300µA
250µA
200µA
150µA
100µA
50µA
C
VCE=4V
)
)
V
(
10
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
3
1
0.01 310.10.03 0.3
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=4V
f=10MHz
T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=25
–25˚C
)
=25˚C
)
Area of safe operation (ASO) R
100
30
)
10
A
(
C
I
CP
3
I
C
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
Non repetitive pulse
=25˚C
T
C
10ms
300ms
t=1ms
Collector to emitter voltage VCE (V
)
3
10
)
˚C/W
2
(
10
(t)
th
10
1
Thermal resistance R
–1
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10