Panasonic 2SD0973A, 2SD0973 Datasheet

Transistor

2SD973, 2SD973A

Silicon NPN epitaxial planer type

For low-frequency power amplification

Features

■

●

Low collector to emitter saturation voltage V

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD973
2SD973A
2SD973

2SD973A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

30
60
25
50

5

1.5
1
1

150

–55 ~ +150

CE(sat)

.

Unit

V

V

V
A

A
W
˚C
˚C

6.9±0.1

1.5

0.4

1.0±0.1

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

1.5 R0.9

R0.9

R0.7

0.85

0.55±0.1 0.45±0.05

2.5 2.5

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

Unit: mm

1.0

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage

2SD973
2SD973A
2SD973
2SD973A

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank Q R S

h

FE1

85 ~ 170 120 ~ 240 170 ~ 340

Conditions

VCB = 20V, IE = 0

min

typ

max

0.1

Unit

µA

30

IC = 10µA, IE = 0

V

60
25

IC = 2mA, IB = 0

V

50

IE = 10µA, IC = 0

*1

VCE = 10V, IC = 500mA
VCE = 5V, IC = 1A
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA

*2

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0. f = 1MHz

85
50

5

160

340

V

100

0.2

0.85
200

11

0.4

1.2
MHz

20

*2

Pulse measurement

pF

V
V

1

Transistor 2SD973, 2SD973A

PC — Ta IC — V

1.4

)
W

1.2

(

C

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

2

or more, and

Ambient temperature Ta (˚C

V

— I

CE(sat)

Ta=75˚C

25˚C

Collector current IC (A

C

IC/IB=10

–25˚C

)

)

CE

1.50

1.25

)
A

(

1.00

C

0.75

0.50

Collector current I

0.25

0

0108264

Ta=25˚C

IB=10mA

9mA
8mA
7mA
6mA
5mA

4mA
3mA

2mA

1mA

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

Ta=–25˚C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

C

IC/IB=10

25˚C

75˚C

)

1.2
VCE=10V

Ta=25˚C

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

012108264

)

Base current IB (mA

hFE — I

600

FE

500

400

300

Ta=75˚C

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC — I

25˚C

–25˚C

B

)

C

=10

V

CE

)

fT — I

E

200

VCB=10V
Ta=25˚C

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

Cob — V

50

)
pF

(

40

ob

30

20

10

Collector output capacitance C

0

1 3 10 30 100

)

Collector to base voltage VCB (V

CB

IE=0
f=1MHz
Ta=25˚C

120

)
V

(

100

CER

80

60

40

20

Collector to emitter voltage V

0

0.1 1 10 1000.3 3 30

)

Base to emitter resistance RBE (kΩ

V

— R

CER

BE

IC=10mA
Ta=25˚C

2SD973A

2SD973

)