Panasonic 2SD0968A, 2SD0968 Datasheet

Transistor

2SD968, 2SD968A

Silicon NPN epitaxial planer type

For low-frequency driver amplification
Complementary to 2SB789 and 2SB789A

Features

■

●

High collector to emitter voltage V

●

Large collector power dissipation PC.

●

Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD968
2SD968A
2SD968

2SD968A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

Unit

100
120
100
120

5
1

0.5
1

150

V

V

V
A

A
W
˚C
˚C

0.4max.1.0

–0.2

+0.25

1.5±0.1

–0.20

4.0

4.5±0.1

1.6±0.2

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

Marking symbol : W

marking

V

+0.1

(2SD968)

(2SD968A)

Unit: mm

2.5±0.1

0.4±0.04

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to emitter
voltage

2SD968
2SD968A

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank Q R

Marking
Symbol

h

FE1

2SD968 WQ WR
2SD968A VQ VR

90 ~ 155 130 ~ 220

Conditions

min

typ

max

Unit

100

IC = 100µA, IB = 0

V

120

IE = 10µA, IC = 0

*1

VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA

*2

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

90
50

5

V

220

100

0.2

0.85
120

11

0.6

1.2
MHz

20

*2

Pulse measurement

pF

V
V

1

Transistor

2SD968, 2SD968A

PC — Ta IC — V

1.4

)
W

1.2

(

C

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

1 10 100 10003 30 300

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

2

or more, and

Ambient temperature Ta (˚C

V

— I

CE(sat)

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

)

CE

1.2

=20mA

18mA

B

1.0

)

A

(

0.8

C

0.6

0.4

I

16mA

14mA

Ta=25˚C

12mA

10mA
8mA

6mA

Collector current I

0.2

0

012108264

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)

V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

Ta=–25˚C

1 10 100 10003 30 300

C

IC/IB=10

25˚C

75˚C

Collector current IC (mA

4mA

2mA

)

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

015936 12

)

Base current IB (mA

hFE — I

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

1 10 100 10003 30 300

Collector current IC (mA

IC — I

B

C

Ta=75˚C

25˚C

–25˚C

VCE=10V
Ta=25˚C

)

VCE=10V

)

fT — I

E

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

VCB=10V
Ta=25˚C

)

Cob — V

50

CB

)

pF

(

40

ob

30

20

10

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

IE=0
f=1MHz
Ta=25˚C

)