Panasonic 2SD0966 Datasheet

Transistor

5.9±0.2

2.54±0.15

0.7±0.1

4.9±0.2

8.6±0.2

0.7

+0.3

–0.2

13.5±0.53.2

0.45

+0.2
–0.1

1.271.27

0.45

+0.2
–0.1

132

2SD966

Silicon NPN epitaxial planer type

For low-frequency power amplification
For stroboscope

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory operation performances at high efficiency with the
low-voltage power supply.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

40
20

150

–55 ~ +150

7
8
5
1

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

Unit: mm

1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Rank Q R

h

FE1

230 ~ 380 340 ~ 600

Symbol

I

CBO

I

EBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

CE(sat)

f

T

C

ob

Conditions

VCB = 10V, IE = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 2A
IC = 3A, IB = 0.1A

*2

*2

*2

VCB = 6V, IE = –50mA, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz

min

20

7
230
150

typ

max

0.1

0.1

600

150

50

*2

Pulse measurement

Unit

µA
µA

V
V

1

V

MHz

pF

1

Transistor

2SD966

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

Collector current IC (A

)

C

IC/IB=30

–25˚C

)

CE

2.4

2.0

)
A

(

1.6

C

1.2

0.8

Collector current I

0.4

0

0 2.42.01.60.4 1.20.8

Collector to emitter voltage VCE (V

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

Ta=25˚C

IB=7mA

6mA

5mA
4mA

3mA

2mA

1mA

=2V

V

CE

)

6

5

)
A

(

4

C

3

2

Collector current I

1

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

– 0.01

IC — V

BE

VCE=2V

Ta=75˚C

fT — I

E

– 0.1 –1 –10

– 0.03

– 0.3 –3

Emitter current IE (A

25˚C

–25˚C

VCB=6V
Ta=25˚C

)

)

)
pF

(

Cob — V

100

80

ob

60

40

20

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)