Panasonic 2SD0965 User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD0965 (2SD965)

Silicon NPN epitaxial planar type

For low-frequency power amplification

For stroboscope

■ Features

• Low collector-emitter saturation voltage V

• Satisfactory operation performances at high efficiency with the low-

voltage power supply.

CE(sat)

0.7

±0.1

5.0

±0.2

±0.2

5.1

±0.2

0.7

±0.5

12.9

Unit: mm

4.0

±0.2

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

40 V

20 V

7V

5A

8A

750 mW

150 °C

0.45

2.5

+0.15
–0.1

+0.6
–0.2

123

2.5

+0.6
–0.2

±0.2

2.3

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

TO-92-B1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

CEOIC

EBOIE

I

CBO

I

CEO

I

EBO

FE1

h

FE2

CE(sat)IC

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE1

230 to 380 340 to 600

= 1 mA, IB = 020V

= 10 µA, IC = 07V

VCB = 10 V, IE = 0 0.1 µA

VCE = 10 V, IB = 01µA

VEB = 7 V, IC = 0 0.1 µA

*VCE = 2 V, IC = 0.5 A 230 600 

VCE = 2 V, IC = 1 A 150

= 3 A, IB = 0.1 A 0.28 1.00 V

VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz

T

VCB = 20 V, IE = 0, f = 1 MHz 26 50 pF

ob

Publication date: January 2003 SJC00200BED

Note) The part number in the parenthesis shows conventional part number.

1

2SD0965

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

1 000

a

)

mW

800

(

C

600

400

200

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (°C

V

 I

10

)
V

(

CE(sat)

1

0.1

0.01

Collector-emitter saturation voltage V

0.001

0.01 0.1 1 10

CE(sat)

C

IC / IB = 30

Ta = 75°C

25°C

−25°C

Collector current IC (A

IC  V

BE(sat)

CE

 I

25°C

75°C

Ta = 25°C

IB = 7 mA

C

IC / IB = 30

6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

6

VCE = 2 V

5

)
A

(

4

C

3

2

Collector current I

1

0

0 2.01.60.4 1.20.8

)

600

500

FE

400

300

200

Forward current transfer ratio h

100

2.4

2.0

)
A

(

1.6

C

1.2

0.8

Collector current I

0.4

0

)

0 2.42.01.60.4 1.20.8

Collector-emitter voltage VCE (V

V

100

)

V

(

BE(sat)

10

Ta = −25°C

1

0.1

IC V

BE

25°C

Ta = 75°C

−25°C

Base-emitter voltage VBE (V

hFE  I

C

VCE = 2 V

= 25°C

T

a

Ta = 75°C

25°C

−25°C

)

Base-emitter saturation voltage V

0.01

0.01 0.1 1 10

)

Collector current IC (A

)

0

0.01 0.1 1 10

Collector current IC (A

)

fT  I

400

E

VCB = 6 V
T

a

)

300

MHz

(

T

200

100

Transition frequency f

0

− 0.01 − 0.1 −1 −10

Emitter current IE (A

= 25°C

)

100

(pF)

ob

C

80

60

40

20

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

2

Cob  V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

SJC00200BED

Safe operation area

100

I

CP

)

10

A
(

C

I

C

1

Collector current I

0.1

0.01

)

0.1 1 10 100

Collector-emitter voltage VCE (V

t = 1 s

Single pulse

= 25°C

T

a

t = 10 ms

)