Panasonic 2SD0958 Datasheet

Transistor

2SD958

Silicon NPN epitaxial planer type

For high breakdown voltage and low-noise amplification
Complementary to 2SB788

Features

■

●

High collector to emitter voltage V

●

Low noise voltage NV.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

120
120

50

20
400
150

Unit

V
V

7

V
mA
mA

mW

˚C
˚C

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

Unit: mm

1.0

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

Noise voltage

*

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

NV

Rank R S T

h

FE

180 ~ 360 260 ~ 520 360 ~ 700

Conditions

VCB = 50V, IE = 0
VCE = 50V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*

VCE = 5V, IC = 2mA
IC = 20mA, IB = 2mA
VCB = 5V, IE = –2mA, f = 200MHz
VCE = 40V, IC = 2mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

min

120
120

7

180

typ

200

max

100

1

700

0.6

150

Unit

nA
µA

V
V
V

V

MHz

mV

1

Transistor

2SD958

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

VCE=5V

)

V

CE

24

20

)

mA

(

16

C

12

8

Collector current I

4

0

012108264

)

Collector to emitter voltage VCE (V

fT — I

800

700

)

MHz

600

(

T

500

400

300

200

Transition frequency f

100

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Emitter current IE (mA

IB=50µA

E

Ta=25˚C

45µA
40µA
35µA

30µA
25µA
20µA
15µA
10µA

5µA

VCB=5V
Ta=25˚C

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

8

)
pF

7

(

ob

6

5

4

3

2

1

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

— I

CE(sat)

25˚C

Cob — V

Ta=75˚C

–25˚C

CB

C

IC/IB=10

)

IE=0
f=1MHz
Ta=25˚C

)

NV — I

160

140

)

120

mV

(

100

80

60

40

Noise voltage NV

20

0

0.01 0.03 0.1 0.3 1

Collector current IC (mA

VCE=10V
G
Function=FLAT
Ta=25˚C

Rg=100kΩ

2

C

=80dB

V

22kΩ

4.7kΩ

)