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Transistor
2SD958
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification
Complementary to 2SB788
Features
■
●
High collector to emitter voltage V
●
Low noise voltage NV.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
120
120
50
20
400
150
Unit
V
V
7
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
Unit: mm
1.0
1.0
4.1±0.2 4.5±0.1
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
*
hFE Rank classification
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
NV
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
Conditions
VCB = 50V, IE = 0
VCE = 50V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
*
VCE = 5V, IC = 2mA
IC = 20mA, IB = 2mA
VCB = 5V, IE = –2mA, f = 200MHz
VCE = 40V, IC = 2mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
120
120
7
180
typ
200
max
100
1
700
0.6
150
Unit
nA
µA
V
V
V
V
MHz
mV
1
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Transistor
2SD958
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
VCE=5V
)
V
CE
24
20
)
mA
(
16
C
12
8
Collector current I
4
0
012108264
)
Collector to emitter voltage VCE (V
fT — I
800
700
)
MHz
600
(
T
500
400
300
200
Transition frequency f
100
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Emitter current IE (mA
IB=50µA
E
Ta=25˚C
45µA
40µA
35µA
30µA
25µA
20µA
15µA
10µA
5µA
VCB=5V
Ta=25˚C
)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
)
Collector current IC (mA
8
)
pF
7
(
ob
6
5
4
3
2
1
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
— I
CE(sat)
25˚C
Cob — V
Ta=75˚C
–25˚C
CB
C
IC/IB=10
)
IE=0
f=1MHz
Ta=25˚C
)
NV — I
160
140
)
120
mV
(
100
80
60
40
Noise voltage NV
20
0
0.01 0.03 0.1 0.3 1
Collector current IC (mA
VCE=10V
G
Function=FLAT
Ta=25˚C
Rg=100kΩ
2
C
=80dB
V
22kΩ
4.7kΩ
)