Panasonic 2SD0875 Datasheet
Transistor
2SD875
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB767
Features
■
●
Large collector power dissipation PC.
●
High collector to emitter voltage V
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
80
80
5
1
0.5
1
150
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Marking symbol : X
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank R S
h
FE1
130 ~ 220 185 ~ 330
Marking Symbol XR XS
Conditions
VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
*1
VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA
*2
*2
*2
*2
VCB = 10V, IE = –50mA*2, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
80
80
5
130
50
typ
max
330
100
0.2
0.85
120
11
*2
Pulse measurement
0.1
0.4
1.2
Unit
µA
V
V
V
V
V
MHz
pF
1
Transistor
2SD875
PC — Ta IC — V
1.4
)
W
1.2
(
C
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
Ta=–25˚C
1 10 100 10003 30 300
C
IC/IB=10
25˚C
75˚C
Collector current IC (mA
V
CE
)
1.2
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
0108264
)
Collector to emitter voltage VCE (V
hFE — I
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
1 10 100 10003 30 300
)
Collector current IC (mA
C
Ta=75˚C
25˚C
–25˚C
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
VCE=10V
)
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
1 10 100 10003 30 300
Collector current IC (mA
200
)
160
MHz
(
T
120
80
40
Transition frequency f
0
–1 –3 –10 –30 –100
Emitter current IE (mA
CE(sat)
25˚C
fT — I
— I
E
C
Ta=75˚C
IC/IB=10
–25˚C
VCB=10V
Ta=25˚C
)
)
)
pF
(
Cob — V
50
40
ob
30
20
10
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
Area of safe operation (ASO)
10
3
I
)
A
(
C
Collector current I
CP
1
I
C
0.3
0.1
0.03
0.01
0.003
0.001
0.1 1 10 1000.3 3 30
Collector to emitter voltage VCE (V
DC
Single pulse
=25˚C
T
C
t=1s
)
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