Panasonic 2SD0874A, 2SD0874 Datasheet
Transistor
2SD874, 2SD874A
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB766 and 2SB766A
Features
■
●
Large collector power dissipation PC.
●
Low collector to emitter saturation voltage V
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD874
2SD874A
2SD874
2SD874A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
30
60
25
50
1.5
150
–55 ~ +150
5
1
1
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
Marking symbol : Z
+0.25
0.4max.1.0
–0.2
+0.1
(2SD874)
(2SD874A)
Y
–0.20
4.0
Unit: mm
1.5±0.1
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD874
2SD874A
2SD874
2SD874A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R S
Marking
Symbol
h
FE1
2SD874 ZQ ZR ZS
2SD874A YQ YR YS
85 ~ 170 120 ~ 240 170 ~ 340
Conditions
VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
*1
VCE = 10V, IC = 500mA
VCE = 5V, IC = 1A
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
*2
*2
*2
*2
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
30
60
25
50
5
85
50
typ
160
max
340
0.2
0.85
200
*2
Pulse measurement
0.1
0.4
1.2
20
Unit
µA
V
V
V
V
V
MHz
pF
1
Transistor
2SD874, 2SD874A
PC — Ta IC — V
1.4
)
W
1.2
(
C
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
Ta=–25˚C
75˚C
C
IC/IB=10
25˚C
Collector current IC (A
)
V
CE
)
1.50
1.25
)
A
(
1.00
C
0.75
0.50
Collector current I
0.25
0
0108264
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
300
Ta=75˚C
200
100
Forward current transfer ratio h
0
0.01 0.1 1 100.03 0.3 3
25˚C
–25˚C
Collector current IC (A
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
)
C
=10
V
CE
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
200
VCB=10V
Ta=25˚C
)
160
MHz
(
T
120
80
40
Transition frequency f
0
–1 –3 –10 –30 –100
Emitter current IE (mA
CE(sat)
25˚C
fT — I
— I
Ta=75˚C
C
IC/IB=10
–25˚C
)
E
)
)
pF
(
Cob — V
50
40
ob
30
20
10
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
Area of safe operation (ASO)
10
3
)
I
A
CP
(
1
C
I
C
0.3
0.1
Collector current I
0.03
0.01
0.1 1 10 1000.3 3 30
Collector to emitter voltage VCE (V
DC
Single pulse
T
=25˚C
C
t=1s
2SD874
2SD874A
)
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