Panasonic 2SC4808G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4808G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
2
21e
T
■ Package
• Code
SSMini3-F3
• Marking Symbol: 3M
• Pin Name
1. Base
2. Emitter
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
−55 to +125 °C
stg
15 V
10 V
2V
80 mA
125 mW
125 °C
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Forward transfer gain S
Maximum unilateral power gain G
Noise figure NF VCE = 8 V, IC = 7 mA, f = 0.8 GHz 1.3 2.0 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement
*
CBOIC
CEOIC
I
CBO
I
EBO
h
FE
21e
UM
= 10 µA, IE = 015V
= 100 µA, IB = 010 V
VCB = 10 V, IE = 01µA
VEB = 2 V, IC = 01µA
VCE = 8 V, IC = 20 mA 50 150 300
VCE = 8 V, IC = 15 mA, f = 0.8 GHz 5 6 GHz
T
VCB = 10 V, IE = 0, f = 1 MHz 0.7 1.2 pF
ob
2VCE = 8 V, IC = 15 mA, f = 0.8 GHz 11 14 dB
VCE = 8 V, IC = 15 mA, f = 0.8 GHz 15 dB
Publication date: May 2007 SJC00395AED
1
2SC4808G
This product complies with the RoHS Directive (EU 2002/95/EC).
140
PC T
)
120
mW
(
C
100
80
60
40
20
Collector power dissipation P
0
0
Ambient temperature Ta (°C
1
IC / IB = 10
(V)
CE(sat)
0.1
Ta = 85°C
40
V
25°C
CE(sat)
80
I
a
−25°C
IC V
hFE I
Ta = 85°C
25°C
−25°C
CE
C
IB = 5 mA
4 mA
3 mA
2 mA
1 mA
(V)
CE
90
= 25°C
T
a
80
70
60
(mA)
C
50
40
30
Collector current I
20
10
120
)
C
0
012108264
Collector-emitter voltage V
250
V
= 8 V
CE
FE
200
150
100
50
Forward current transfer ratio h
80
)
60
mA
(
C
40
20
Collector current I
0
0 0.2 0.6 0.8 1.0 1.20.4 1.4
10
(pF)
ob
C
1
IC V
BE
V
= 8 V
CE
Base-emitter voltage VBE (V
Cob V
CB
f = 1 MHz
T
= 25°C
a
)
Collector-emitter saturation voltage V
0.01
0.1
1 10 100
Collector current IC (mA)
2
0
1 10 100
Collector current IC (mA
)
SJC00395AED
Collector output capacitance
(Common base, input open circuited)
0.1
04010 3020
Collector-base voltage V
(V)
CB
Loading...