Panasonic 2SC4805G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC4805G

Silicon NPN epitaxial planar type

For 2 GHz band low-noise amplification

■ Features

• High transition frequency f

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing

T

■ Package

•

Code
SMini3-F2

•

Marking Symbol: 3S

•

Pin Name

1: Base
2: Emitter

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

−55 to +150 °C

stg

15 V

10 V

2V

65 mA

150 mW
150 °C

3: Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Forward transfer gain S

Maximum unilateral power gain G

Noise figure NF VCE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 3.0 dB

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R S No-rank

h

FE

Marking symbol 3SQ 3SR 3SS 3S

Product of no-rank is not classified and have no indication for rank.

*

50 to 120 100 to 170 150 to 300 50 to 300

I

VCB = 10 V, IE = 01µA

CBO

I

VEB = 1 V, IC = 01µA

EBO

h

VCE = 8 V, IC = 20 mA 50 300 

FE

VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7.0 8.5 GHz

T

VCB = 10 V, IE = 0, f = 1 MHz 0.6 1.0 pF

ob

2VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7 9 dB

21e

VCE = 8 V, IC = 15 mA, f = 1.5 GHz 10 dB

UM

Publication date: May 2007 SJC00367AED

1

2SC4805G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

200

)

mW

160

(

C

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)
V

(

CE(sat)

0.01

10

1

0.1

CE(sat)

a

C

IC / IB = 10

)

Ta = 75°C

25°C

−25°C

IC  V

30

25

CE

)

mA

(

20

C

15

10

Collector current I

5

0

012108264

Collector-emitter voltage VCE (V

hFE  I

240

200

FE

160

120

80

Forward current transfer ratio h

40

Ta = 75°C

25°C

−25°C

Ta = 25°C

IB = 250 µA

C

VCE = 8 V

200 µA

150 µA

100 µA

50 µA

IC  V

120

100

BE

VCE = 8 V

)

mA
(

C

80

60

40

25°C

Ta = 75°C −25°C

Collector current I

20

0

)

0 1.21.00.80.2 0.60.4

Base-emitter voltage VBE (V

fT  I

12

10

)

GHz
(

8

T

6

4

Transition frequency f

2

C

VCB = 8 V
f = 1.5 GHz
T

= 25°C

a

)

Collector-emitter saturation voltage V

0.001

0.1 1 10 100

Collector current IC (mA

Cob  V

1.2

(pF)

ob

C

1.0

0.8

0.6

0.4

0.2

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

2

)

IE = 0
f = 1 MHz

= 25°C

T

a

0

0.1 1 10 100

Collector current IC (mA

GUM  I

12

)

dB

(

10

UM

8

6

4

2

C

)

VCE = 8 V
f = 1.5 GHz

= 25°C

T

a

0

1 10 100

Collector current IC (mA

NF  I

6

5

C

)
dB

4

(

3

2

Noise figure NF

1

)

VCE = 8 V
f = 1.5 GHz

= 25°C

T

a

Maximum unilateral power gain G

0

0.1 1 10 100

)

Collector current IC (mA

)

0

0.1 1 10 100

Collector current IC (mA

)

SJC00367AED