Panasonic 2SC4787 Datasheet

Transistor

2SC4787

Silicon NPN epitaxial planer type

For intermediate frequency amplification

Features

■

●

High transition frequency fT.

●

Satisfactory linearity of forward current transfer ratio hFE.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Power gain
Transition frequency

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

C

re

PG
f

T

Ratings

45
35

4

50
600
150

–55 ~ +150

VCB = 20V, IE = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 10mA
IC = 20mA, IB = 2mA
VCB = 10V, IE = –1mA, f = 10.7MHz
VCB = 10V, IE = –10mA, f = 58MHz
VCB = 10V, IE = –10mA, f = 100MHz

Unit

V
V
V

mA

mW

˚C
˚C

Conditions

6.9±0.1

0.7 4.0

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

123

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

min

45
35

4

20

18

300

1.05
±0.05

1.0

0.85

–0.05

+0.1

0.45

1:Emitter
2:Collector
3:Base
MT1 Type Package

0.65
max.

typ

50

500

2.5±0.1

2.5±0.1

max

0.1

100

0.5

1.5

Unit: mm

(1.45)

0.8

0.8

3.5±0.114.5±0.5

(HW type)

Unit

MHz

µA

V
V
V

V

pF

dB

1

Transistor

2SC4787

PC — Ta IC — V

800

)

700

mW

(

C

600

500

400

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

80

70

)

60

mA

(

C

50

40

30

20

Collector current I

10

0

0108264

IB=2.0mA

Collector to emitter voltage VCE (V

hFE — I

C

120

FE

100

80

60

40

20

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

VCE=10V

25˚C

–25˚C

Collector current IC (mA

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

25˚C

Ta=75˚C

VCB=10V
Ta=25˚C

fT — I

–25˚C

E

Emitter current IE (mA

VCE=10V

)

)

)
pF

(

Cob — V

3.0

2.5

ob

2.0

1.5

1.0

0.5

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

Cre — V

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

1 3 10 30 100

)

Collector to emitter voltage VCE (V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)
dB

(

Power gain PG

)

PG — I

E

30

25

20

15

10

5

0

– 0.1 –1 –10 –100– 0.3 –3 –30

VCB=10V
f=58MHz
Ta=25˚C

Emitter current IE (mA

)