Panasonic 2SC4782 Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.050.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SC4782

Silicon NPN epitaxial planer type

For high speed switching

Features

■

●

High-speed switching.

●

Low collector to emitter saturation voltage V

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CES

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

25
20

300
200
200
150

–55 ~ +150

5

CE(sat)

.

Unit

V
V

V
mA
mA

mW

˚C
˚C

Unit: mm

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Marking symbol : DV

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time

*

hFE Rank classification

Marking Symbol DVP DVQ DVR

Rank P Q R

h

FE

Symbol

I
I
h
V
V
f
C
t
t
t

CBO

EBO

FE

T

on

off

stg

*

CE(sat)

BE(sat)

ob

VCB = 10V, IE = 0
VEB = 4V, IC = 0
VCE = 1V, IC = 10mA
IC = 10mA, IB = 1mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

Refer to the measurment circuit

40 ~ 80 60 ~ 120 90 ~ 200

Conditions

min

40

200

typ

0.17

0.76
500

2
17
15

7

max

0.1

0.1

200

0.25

1.0

4

Unit

µA
µA

V
V

MHz

pF

ns
ns
ns

1

Transistor

2SC4782

Switching time measurement circuit

t

, t

Test Circuit t

on

off

0.1µF

3.3kΩ

t

10%

on

3.3kΩ
V

bb

–3V

90%

220Ω

=

=10V

V

in

50Ω

V

in

V

out

IC — V

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.21.00.80.2 0.60.4

Collector to emitter voltage VCE (V

50Ω

=3V

V

CC

V

in

V

out

t

off

CE

Ta=25˚C

IB=3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

10%

V

90%

PC — Ta

T est Circuit

stg

out

Vin=10V

0.1µF

50Ω

0

V

in

V

out

(Waveform at A)

A

500Ω

500Ω

=2V

V

bb

t

stg

V

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

1 10 100 10003 30 300

)

25˚C

Collector current IC (mA

910Ω

10%

10%

CE(sat)

0.1µF

— I

Ta=75˚C

–25˚C

1kΩ

90Ω

VCC=10V

C

V

IC/IB=10

)

out

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01
1 10 100 10003 30 300

C

Ta=–25˚C

25˚C
75˚C

IC/IB=10

Collector current IC (mA

)

)

hFE — I

C

240

FE

200

160

120

Ta=75˚C

25˚C

80

–25˚C

40

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Collector current IC (mA

2

VCE=1V

)

fT — I

1200

)

1000

MHz

(

T

800

600

400

200

Transition frequency f

0

–1 –10 –100 –1000–3 –30 –300

Emitter current IE (mA

E

VCB=10V
Ta=25˚C
f=200MHz

)

)
pF

(

Cob — V

6

5

ob

4

3

2

1

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

IE=0
f=1MHz
Ta=25˚C

)