Panasonic 2SC4715 Datasheet
Transistor
2SC4715
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Features
■
●
Satisfactory linearity of forward current transfer ratio hFE.
●
High collector to emitter voltage V
●
Small collector output capacitance Cob.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
150
150
100
50
300
150
Unit
V
V
5
V
mA
mA
mW
˚C
˚C
4.0±0.2
3.0±0.215.6±0.5
marking
123
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
1.271.27
0.1
+0.2
–
0.45
2.54±0.15
0.7±0.1
Unit: mm
2.0±0.2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Noise voltage
*1
hFE Rank classification
Symbol
I
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
C
ob
f
T
NV
Rank R S
h
FE
130 ~ 220 185 ~ 330
Conditions
VCB = 100V, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
*1
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCB = 10V, IE = 0, f = 1MHz
VCB = 10V, IE = –10mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
150
5
130
typ
160
150
max
1
330
1
3
Unit
µA
V
V
V
pF
MHz
mV
1
Transistor 2SC4715
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
hFE — I
C
300
FE
250
Ta=75˚C
200
25˚C
150
–25˚C
100
VCE=5V
V
CE
)
180
150
)
mA
(
120
C
90
60
Collector current I
30
0
012108264
)
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
2
CB
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
f=1MHz
I
=0
E
Ta=25˚C
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
1 10 100 10003 30 300
Collector current IC (mA
CE(sat)
25˚C
— I
Ta=75˚C
–25˚C
C
IC/IB=10
)
50
Forward current transfer ratio h
0
1 10 100 10003 30 300
Collector current IC (mA
1
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
2
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