Panasonic 2SC4691J User Manual
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4691J
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage V
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
CE(sat)
■ Absolute Maximum Ratings Ta = 25°C
0.27
±0.02
5˚
+0.05
1.60
–0.03
1.00
±0.05
3
12
(0.50)(0.50)
±0.05
0.80
+0.05
0.85
(0.80)
+0.05
0 to 0.02
0.70
–0.03
–0.03
±0.05
1.60
0.12
5˚
Unit: mm
+0.03
–0.01
(0.375)
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (E-B short) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CES
EBO
C
CP
C
j
stg
40 V
40 V
5V
100 mA
300 mA
125 mW
125 °C
−55 to +125 °C
Marking Symbol: 2Y
0.10 max.
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Turn-on time t
Turn-off time t
Storage time t
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R No-rank
h
FE
60 to 120 90 to 200 60 to 200
Product of no-rank is not classified and have no indication for rank.
I
CBO
I
EBO
h
FE
CE(sat)IC
BE(sat)IC
T
ob
on
off
stg
VCB = 40 V, IE = 0 0.1 µA
VEB = 4 V, IC = 0 0.1 µA
VCE = 1 V, IC = 10 mA 60 200
= 10 mA, IB = 1 mA 0.17 0.25 V
= 10 mA, IB = 1 mA 1.0 V
VCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHz
VCB = 10 V, IE = 0, f = 1 MHz 2 6 pF
Refer to the measurement circuit 17 ns
17 ns
10 ns
Publication date: January 2003 SJC00282BED
1
2SC4691J
This product complies with the RoHS Directive (EU 2002/95/EC).
Measurement circuit
ton , t
test circuit t
off
220 Ω
3.3 kΩ
V
= 10 V
IN
50 Ω
3.3 kΩ
VBB = −3 V
0.1 µF
50 Ω
V
CC
= 3 V
test circuit
stg
V
OUT
V
= 10 V
IN
50 Ω
0.1 µF
A
500 Ω
500 Ω
V
BB
910 Ω
= 2 V
0.1 µF
90 Ω
V
CC
1 kΩ
= 10 V
V
OUT
V
IN
10%
V
OUT
90%
t
on
PC T
150
)
125
mW
(
C
100
75
50
25
Collector power dissipation P
0
0 15012510025 7550
Ambient temperature Ta (°C
10%
a
90%
t
V
IN
V
OUT
off
10%
10%
t
stg
(Waveform at A)
IC V
250
200
)
A
(m
C
150
100
Collector current I
50
0
)
0654132
Collector-emitter voltage VCE (V
CE
Ta = 25°C
IB = 8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
1
)
V
(
CE(sat)
0.1
Collector-emitter saturation voltage V
0.01
0.1 1 10 100 1 000
)
V
I
CE(sat)
25°C
= 75°C
T
a
C
IC / IB = 10
−25°C
Collector current IC (mA
)
V
I
)
V
(
BE(sat)
10
BE(sat)
1
−25°C
25°C
C
IC / IB = 10
= 75°C
T
a
160
140
FE
120
100
80
60
40
Forward current transfer ratio h
20
Base-emitter saturation voltage V
0.1
0.1 1 10 100
Collector current IC (mA
)
0
0.1 1 10 100 1 000
2
hFE I
C
V
CE
= 75°C
T
a
25°C
−25°C
Collector current IC (mA
SJC00282BED
= 1 V
)
Cob V
100
(pF)
ob
C
10
1
Collector output capacitance
(Common base, input open circuited)
0.1
0 5 15 20 25 3010 35
CB
f = 1 MHz
T
Collector-base voltage VCB (V
= 25°C
a
)
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