Panasonic 2SC4656G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4656G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1791G
■ Features
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
cuited) C
ob
• SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
T
■ Package
• Code
SSMini3-F3
• Marking Symbol: AM
• Pin Name
1. Base
2. Emitter
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
−55 to +125 °C
stg
50 V
50 V
5V
50 mA
125 mW
125 °C
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage V
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
h
FE
*
200 to 400 250 to 500
CBOIC
CEOIC
EBOIE
I
CBO
I
CEO
h
FE
CE(sat)IC
= 10 µA, IE = 050V
= 1 mA, IB = 050V
= 10 µA, IC = 05V
VCB = 10 V, IE = 0 0.1 µA
VCE = 10 V, IB = 0 100 µA
VCE = 10 V, IC = 2 mA 200 500
= 10 mA, IB = 1 mA 0.06 0.3 V
VCB = 10 V, IE = −2 mA, f = 200 MHz 250 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF
ob
Publication date: May 2007 SJC00393AED
1
2SC4656G
This product complies with the RoHS Directive (EU 2002/95/EC).
PC T
140
)
120
mW
(
C
100
80
60
40
20
Collector power dissipation P
0
0
40
a
80
Ambient temperature Ta (°C
V
I
1
CE(sat)
(V)
CE(sat)
0.1
Ta = 85°C
25°C
Collector-emitter saturation voltage V
0.01
0.1
1 10 100
C
IC / IB = 10
−25°C
Collector current IC (mA)
120
IC V
60
50
40
(mA)
C
30
20
Ta = 25°C
CE
IB = 100 µA
90 µA
80 µA
70 µA
60 µA
50 µA
Collector current I
10
0
)
012108264
Collector-emitter voltage V
hFE I
700
= 10 V
V
CE
600
FE
500
400
300
200
Forward current transfer ratio h
100
0
Ta = 85°C
1 10 100
C
25°C
−25°C
Collector current IC (mA
(V)
CE
)
50
40
)
mA
(
C
30
20
Collector current I
10
0
0 0.2 0.6 0.8 1.0 1.20.4 1.4
10
(pF)
ob
C
1
Collector output capacitance
(Common base, input open circuited)
0.1
04010 3020
IC V
BE
V
= 10 V
CE
25°C
Ta = 85°C
−25°C
Base-emitter voltage VBE (V
Cob V
CB
f = 1 MHz
T
a
Collector-base voltage V
= 25°C
(V)
CB
)
2
SJC00393AED
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