Panasonic 2SC4627G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC4627G

Silicon NPN epitaxial planar type

For high-frequency amplification

■ Features

• Optimum for RF amplification of FM/AM radios

• High transition frequency f

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

T

■ Package

• Code
SSMini3-F3

• Marking Symbol: U

• Pin Name

1. Base

2. Emitter

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

−55 to +125 °C

stg

30 V

20 V

3V

15 mA

125 mW

125 °C

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Emitter-base voltage (Collector open) V

Base-emitter voltage V

Forward current transfer ratio

Transition frequency f

Reverse transfer capacitance C

(Common emitter)

Power gain PG VCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB

Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 dB

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank C

h

FE

*

65 to 160

CBOIC

EBOIE

h

= 10 µA, IE = 030V

= 10 µA, IC = 03V

VCB = 6 V, IE = −1 mA 720 mV

BE

VCB = 6 V, IE = −1 mA 65 160 

FE

VCB = 6 V, IE = −1 mA, f = 200 MHz 450 650 MHz

T

VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1.0 pF

re

Publication date: June 2007 SJC00391AED

1

2SC4627G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

150

)

125

mW
(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

IC  V

60

50

)

mA
(

40

C

30

20

Collector current I

10

Ta = 75°C

a

BE

VCE = 6 V

25°C

−25°C

IC  V

CE(sat)

25°C

CE

 I

Ta = 75°C

−25°C

Ta = 25°C

IB = 100 µA

80 µA

60 µA

40 µA

20 µA

C

IC / IB = 10

12

VCE = 6 V
T

10

)

mA
(

8

C

6

4

Collector current I

2

0

0 18015012030 9060

)

120

Ta = 75°C

100

FE

80

60

40

Forward current transfer ratio h

20

−25°C

12

10

)

mA

(

8

C

6

4

Collector current I

2

0

0128416

)

Collector-emitter voltage VCE (V

V

10

)
V

(

CE(sat)

1

0.1

0.01

IC  I

= 25°C

a

Base current IB (µA

hFE  I

25°C

B

)

C

VCE = 6 V

0

0 1.21.00.80.2 0.60.4

Base-emitter voltage VBE (V

Cob  V

3.0

(pF)

ob

C

2.5

2.0

1.5

1.0

0.5

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

2

f = 1 MHz

= 0

I

E

= 25°C

T

a

Collector-emitter saturation voltage V

0.001

0.1 1 10 100

)

Collector current IC (mA

)

0

1 10 100 1 000

Collector current IC (mA

)

)

SJC00391AED