Panasonic 2SC4627 Datasheet

Transistor

2SC4627

Silicon NPN epitaxial planer type

For high-frequency amplification

Features

■

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency fT.

●

SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

30
20

3

15
125
125

–55 ~ +125

Unit

V
V
V

mA

mW

˚C
˚C

1.6±0.15

0.8±0.1 0.40.4

1

0.5

1.6±0.1

1.0±0.1

0.5

2

0.3

0.75±0.15

0.45±0.1

1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package

0.2±0.1

0 to 0.1

Marking symbol : U

3

Unit: mm

–0.05

+0.1

0.2

–0.05

+0.1

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
Noise figure

*

hFE Rank classification

Symbol

V

CBO

V

EBO

*

h

FE

V

BE

f

T

C

re

PG
NF

Rank B C D

h

FE

40 ~ 110 65 ~ 160 100 ~ 260

Marking Symbol UB UC UD

Conditions

IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA, f = 200MHz
VCB = 6V, IE = –1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz

min

30

3

40

450

typ

0.72
650

0.8

24

3.3

max

260

1

Unit

V
V

V

MHz

pF
dB
dB

1

Transistor

2SC4627

PC — Ta IC — V

150

)
mW

125

(

C

100

75

50

25

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — V

BE

30

Ta=75˚C

25˚C

–25˚C

25

)
mA

(

20

C

15

10

Collector current I

5

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

VCE=6V

CE

12

10

)
mA

(

8

C

6

4

Collector current I

2

0

018612

)

)

Collector to emitter voltage VCE (V

V

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

IB=100µA

— I

Ta=75˚C

–25˚C

Ta=25˚C

80µA

60µA

40µA

20µA

)

C

IC/IB=10

)

12

10

)
mA

(

8

C

6

4

Collector current I

2

0

0 18060 120

360

FE

300

240

180

120

60

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

IC — I

B

VCE=6V
Ta=25˚C

Base current IB (µA

hFE — I

C

VCE=6V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

)

fT — I

1200

)

1000

MHz

(

T

800

600

400

200

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Emitter current IE (mA

2

E

VCB=6V
Ta=25˚C

)

Zrb — I

E

120

)

Ω

(

100

rb

80

60

40

20

Reverse transfer impedance Z

0

– 0.1 – 0.3 –1 –3 –10

Emitter current IE (mA

VCB=6V
f=2MHz
Ta=25˚C

)

Cre — V

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

Collector to emitter voltage VCE (V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)