Panasonic 2SC4626J User Manual

Transistors

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC4626J

Silicon NPN epitaxial planar type

For high-frequency amplification

■ Features

• Optimum for RF amplification of FM/AM radios

• High transition frequency f

T

• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing

■ Absolute Maximum Ratings Ta = 25°C

0.27

±0.02

5˚

+0.05

1.60

–0.03

1.00

±0.05

3

12

(0.50)(0.50)

±0.05

0.80

+0.05

0.85

(0.80)

+0.05

0 to 0.02

0.70

–0.03

–0.03

±0.05

1.60

0.12

5˚

Unit: mm

+0.03
–0.01

(0.375)

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

C

j

stg

30 V

20 V

5V

30 mA

125 mW

125 °C

−55 to +125 °C

Marking Symbol: V

0.10 max.

1: Base
2: Emitter
3: Collector

EIAJ: SC-89

SSMini3-F1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

*

Transition frequency f

Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB

Reverse transfer impedance Z

Common-emitter reverse transfer C

capacitance

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank B C No-rank

h

FE

70 to 140 110 to 220 70 to 220

Product of no-rank is not classified and have no indication for rank.

I

VCB = 10 V, IE = 0 0.1 µA

CBO

h

VCB = 10 V, IE = −1 mA 70 220 

FE

VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz

T

VCB = 10 V, IE = −1 mA, f = 2 MHz 22 50 Ω

rb

VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.9 1.5 pF

re

Publication date: December 2002 SJC00281BED

1

2SC4626J

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

140

)

120

mW
(

C

100

80

60

40

20

Collector power dissipation P

0

0 1406020 80 12040 100

Ambient temperature Ta (°C

IB  V

90

80

70

)

60

mA
(

B

50

40

30

Base current I

20

10

0

0 1.21.00.80.2 0.60.4

Base-emitter voltage VBE (V

a

BE

VCE = 10 V

= 25°C

T

a

IC  V

CE

16

Ta = 25°C

14

)

12

A
(m

C

10

8

6

4

Collector current I

2

0

)

012108264

Collector-emitter voltage VCE (V

IC  V

120

100

IB = 100 µA

80 µA

60 µA

40 µA

20 µA

)

BE

VCE = 10 V

)

(

mA

C

80

60

40

Ta = 85°C

25°C

−25°C

100

VCE = 10 V
T

90

80

)

70

mA

(

C

60

50

40

30

Collector current I

20

10

0

012108264

10

)

IC / IB = 10

V

(

CE(sat)

1

0.1

IC  I

= 25°C

a

Base current IB (mA

V

CE(sat)

= 85°C

T

a

25°C

B

 I

)

C

−25°C

Collector current I

20

0

)

0 0.2 0.6 0.8 1.0 1.20.4 1.4

Base-emitter voltage VBE (V

)

Collector-emitter saturation voltage V

0.01

0.1 1 10 100 1 000

Collector current IC (mA

)

hFE  I

T

a

= 85°C

25°C

−25°C

C

VCE = 10 V

10

(pF)

ob

C

Collector output capacitance

(Common base, input open circuited)

1

0 5 15 20 25 3010 35

)

250

FE

200

150

100

50

Forward current transfer ratio h

0

1 10 100

Collector current IC (mA

2

Cob  V

CB

f = 1 MHz

= 25°C

T

a

Collector-base voltage VCB (V

SJC00281BED

)