Panasonic 2SC4606 Datasheet

Transistor

2SC4606

Silicon NPN epitaxial planer type

For low-frequency driver amplification
Complementary to 2SA1762

Features

■

●

High collector to emitter voltage V

●

Optimum for the driver stage of a low-frequenc y and 25 to 30W
output amplifier.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

80
80

5
1

0.5
1

150

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

2.5±0.1

1.0

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

Unit: mm

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank R S

h

FE1

130 ~ 220 185 ~ 330

Conditions

VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0

*1

VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA

*2

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

80
80

5

130

50

typ

max

330

100

0.2

0.85
120

11

*2

Pulse measurement

0.1

0.4

1.2

20

Unit

µA

V
V
V

V
V

MHz

pF

1

Transistor 2SC4606

PC — Ta IC — V

1.4

)
W

1.2

(

C

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

CE(sat)

1 10 100 10003 30 300

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

)

CE

1.2

1.0

)

A

(

0.8

C

0.6

0.4

Ta=25˚C

IB=10mA

9mA

Collector current I

0.2

0

0108264

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)

V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01
1 10 100 10003 30 300

25˚C

C

IC/IB=10

Ta=–25˚C

75˚C

Collector current IC (mA

8mA

7mA
6mA

5mA
4mA

3mA

2mA

1mA

)

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0108264

)

Base current IB (mA

hFE — I

300

FE

250

200

150

100

50

Forward current transfer ratio h

0

1 10 100 10003 30 300

Collector current IC (mA

IC — I

Ta=75˚C

25˚C

–25˚C

B

VCE=10V
Ta=25˚C

)

C

VCE=10V

)

fT — I

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

E

VCB=10V
Ta=25˚C

50

)

pF

(

40

ob

Cob — V

CB

IE=0
f=1MHz
Ta=25˚C

4

10

3

10

VCB=20V

I

CBO

— Ta

)

30

20

10

)
Ta

(

Ta=25˚C

(

CBO

I

CBO

I

2

10

10

Collector output capacitance C

0

1 3 10 30 100

)

Collector to base voltage VCB (V

)

1

0 18060 120

Ambient temperature Ta (˚C

)