Panasonic 2SC4562 Datasheet

Transistor

2SC4562

Silicon NPN epitaxial planer type

For high-frequency amplification
Complementary to 2SA1748

Features

■

●

High transition frequency fT.

●

Small collector output capacitance Cob.

●

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

50
50

5

50
150
150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

2.1±0.1

1.25±0.1 0.4250.425

1

1.3±0.10.9±0.1

2.0±0.2

0.650.2 0.65

2

0.7±0.1

0.2±0.1

0 to 0.1

1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package

Marking symbol : AM

3

Unit: mm

–0

+0.1

0.3

–0.05

+0.1

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

Rank Q R

h

FE

200 ~ 400 250 ~ 500

Marking Symbol AMQ AMR

Conditions

VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*

VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

50
50

5

200

typ

0.06
250

1.5

max

0.1

100

500

0.3

Unit

µA
µA

V
V
V

V

MHz

pF

1

Transistor 2SC4562

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

C

IC/IB=10

CE

120

100

)

mA

(

80

C

60

40

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

600

FE

500

400

300

Ta=75˚C

25˚C

–25˚C

Ta=25˚C

IB=300µA

250µA
200µA

150µA

100µA

50µA

)

C

VCE=10V

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

01.21.00.80.2 0.60.4

600

)

500

MHz

(

T

400

300

IC — V

BE

VCE=10V

25˚C

Ta=75˚C

–25˚C

Base to emitter voltage VBE (V

fT — I

E

VCB=10V
Ta=25˚C

)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

1 10 100 10003 30 300

6

)
pF

(

5

ob

4

3

2

1

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Cob — V

CB

IE=0
f=1MHz
Ta=25˚C

)

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Collector current IC (mA

)

200

100

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Emitter current IE (mA

)

2