Panasonic 2SC4543 Datasheet

Transistor

2SC4543

Silicon NPN epitaxial planer type

For video amplifier

Features

■

●

High transition frequency fT.

●

Small collector output capacitance Cob.

●

Wide current range.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*1

REB = 1.2kΩ

*2

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CER

V

CEO

V

EBO

I

CP

I

C

*2

P

C

T

j

T

stg

*1

Ratings

110
100

50

3.5
300
150

1.0
150

–55 ~ +150

Unit

V
V
V

V
mA
mA

W
˚C
˚C

4.5±0.1

1.6±0.2

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

1.5±0.1

–0.20

+0.25

0.4max.1.0

4.0

–0.2

+0.1

Marking symbol : 1F

Unit: mm

2.5±0.1

0.4±0.04

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

I

CEO

V

CBO

V

CER

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T1

f

T2

C

ob

Conditions

VCE = 35V, IB = 0
IC = 100µA, IE = 0
IC = 500µA, RBE = 470Ω
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 5V, IC = 100mA
IC = 150mA, IB = 15mA

*

*

VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = –110mA*, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz

min

110
100

50

3.5
20

typ

max

10

0.5
300
350

3

*

Pulse measurement

Unit

µA

V
V
V
V

V
MHz
MHz

pF

1

Transistor 2SC4543

PC — Ta IC — V

1.6

)

1.4

W

(

C

1.2

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

CE(sat)

1 10 100 10003 30 300

25˚C

C

IC/IB=10

Ta=75˚C

–25˚C

Collector current IC (mA

)

)

CE

240

200

)

mA

(

160

C

120

80

Collector current I

40

0

012108264

IB=5.0mA

Collector to emitter voltage VCE (V

hFE — I

C

120

FE

100

80

60

40

20

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

4.5mA

4.0mA

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

VCE=5V

)

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

–1 –10 –100 –1000–3 –30 –300

IC — V

BE

VCE=5V

Ta=75˚C

–25˚C

fT — I

E

VCB=10V
Ta=25˚C

Emitter current IE (mA

25˚C

)

)

)
pF

(

Cob — V

6

5

ob

4

3

2

1

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)