Panasonic 2SC4502 Datasheet

Transistor

2SC4502

Silicon NPN epitaxial planer type

For mtermediate frequency amplification

Features

■

●

High transition frequency fT.

●

Large collector power dissipation PC.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

C

*

P

C

T

j

T

stg

Ratings

50
45

4

50

1

150

–55 ~ +150

Unit

V
V
V

mA

W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

re

PG

Conditions

VCB = 20V, IE = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 10µA
IC = 20mA, IB = 2mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 10.7MHz
VCB = 10V, IE = –10mA, f = 58MHz

min

50
45

4

20

300

22

typ max

100

100

0.4

1.5
30

Unit

nA

V
V
V

V

MHz

pF

dB

1

Transistor 2SC4502

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

CE(sat)

25˚C

C

IC/IB=10

Ta=100˚C

Collector current IC (mA

)

–25˚C

)

CE

80

70

)

60

mA

(

C

50

40

30

20

Collector current I

10

0

0108264

IB=2.0mA

Collector to emitter voltage VCE (V

hFE — I

C

100

FE

80

60

40

20

VCE=10V

Ta=100˚C

25˚C

–25˚C

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Collector current IC (mA

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

25˚C

Ta=100˚C –25˚C

fT — I

E

VCB=10V
Ta=25˚C

Emitter current IE (mA

VCE=10V

)

)

)
pF

(

Cob — V

3.0

2.5

ob

2.0

1.5

1.0

0.5

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

Cre — V

)

–2.4

pF

(

re

–2.0

–1.6

–1.2

– 0.8

– 0.4

Common emitter reverse transfer capacitance C

0

1 3 10 30 100

)

Collector to emitter voltage VCE (V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)
dB

(

Power gain PG

)

PG — I

E

30

25

20

15

10

5

0

– 0.1 –1 –10 –100– 0.3 –3 –30

VCB=10V
f=58MHz
Ta=25˚C

Emitter current IE (mA

)