Panasonic 2SC4420 Datasheet

Po wer Transistors

2SC4420

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

900
900
800

7
5
3
1

70

3

150

–55 to +150

FE

Unit

V
V
V
V
A
A
A

W

˚C
˚C

21.0±0.516.2±0.5

3.5 0.715.0±0.2

12.5
Solder Dip

15.0±0.3

11.0±0.2

φ3.2±0.1

2.0±0.2

1.1±0.1

5.45±0.3

10.9±0.5

321

TOP–3 Full Pack Package(a)

Unit: mm

5.0±0.2

3.2

2.0±0.1

0.6±0.2

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 900V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
IC = 0.8A, IB = 0.16A
IC = 0.8A, IB = 0.16A
VCE = 5V, IC = 0.15A, f = 1MHz

IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V

min

800

8
6

typ10max

50
50

1.5

1.5

0.7

2.5

0.3

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC4420

PC—Ta IC—V

80

)

(1)

70

W

(

C

60

50

40

30

20

(2)

10

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

TC=–25˚C

100˚C

0.3

Base to emitter saturation voltage V

0.1

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=3W)

(P

C

V

BE(sat)—IC

25˚C

Collector current IC (A

IC/IB=5

)

CE

3.0

2.5

)
A

(

2.0

C

1.5

1.0

IB=500mA

400mA

Collector current I

0.5

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

TC=100˚C

30

10

3

Forward current transfer ratio h

1

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

TC=25˚C

300mA

200mA

100mA

50mA

C

VCE=5V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

100

)

30

MHz

(

T

10

0.3

Transition frequency f

0.1

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

TC=100˚C

Collector current IC (A

fT—I

C

VCE=5V
f=1MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=5

)

=25˚C

)

Cob—V

1000

)
pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3
t

f

0.1

Switching time t

0.03

0.01
0 1.60.4 1.20.8

Collector current IC (A

, tf — I

stg

t

on

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=250V

CC

=25˚C

T

C

t

stg

Area of safe operation (ASO)

100

30

)

10

A

(

I

CM

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

1ms

10ms

DC

t=0.1ms

)