Panasonic 2SC4417 Datasheet

Transistor

2SC4417

Silicon NPN epitaxial planer type

For intermadiate frequency amplification of TV image

Features

■

●

High transition frequency fT.

●

Satisfactory linearity of forward current transfer ratio hFE.

●

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

45
35

4

50
150
150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

2.1±0.1

1.25±0.1 0.4250.425

1

1.3±0.10.9±0.1

2.0±0.2

0.650.2 0.65

2

0.7±0.1

0.2±0.1

0 to 0.1

1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package

Marking symbol : 2Z

3

Unit: mm

–0

+0.1

0.3

–0.05

+0.1

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance

Symbol

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

re

Conditions

VCE = 20V, IB = 0
IC = 10µA, IE = 0
IE = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = –10mA
IC = 20mA, IB = 2mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 10.7MHz

min

45
35

4

20

typ

50

500

max

10

100

0.5

1.5

Unit

µA

V
V
V

V

MHz

pF

1

Transistor 2SC4417

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

–25˚C

)

CE

80

70

)

60

mA

(

C

50

40

30

20

Collector current I

10

0

0108264

IB=2.0mA

Collector to emitter voltage VCE (V

hFE — I

C

120

FE

100

80

60

40

20

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

VCE=10V

25˚C

–25˚C

Collector current IC (mA

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

IC — V

BE

25˚C

Ta=75˚C

VCB=10V
Ta=25˚C

fT — I

–25˚C

E

Emitter current IE (mA

VCE=10V

)

)

)
pF

(

Cob — V

3.0

2.5

ob

2.0

1.5

1.0

0.5

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

Cre — V

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

1 3 10 30 100

)

Collector to emitter voltage VCE (V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)