Panasonic 2SC4410 Datasheet

Transistor

2SC4410

Silicon NPN epitaxial planer type

For UHF amplification

Features

■

●

Allowing the small current and low voltage operation.

●

High transition frequency fT.

●

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

10

7

2
10
50

150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

2.1±0.1

1.25±0.1 0.4250.425

1

1.3±0.10.9±0.1

2.0±0.2

0.650.2 0.65

2

0.7±0.1

0.2±0.1

0 to 0.1

1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package

Marking symbol : 2X

3

Unit: mm

–0

+0.1

0.3

–0.05

+0.1

0.15

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure

Symbol

I

CBO

I

EBO

h

FE

f

T

C

ob

| S

21e

GUM
NF

Conditions

min

VCB = 10V, IE = 0
VEB = 1.5V, IC = 0
VCE = 1V, IC = 1mA

50
VCE = 1V, IC = 1mA, f = 800MHz
VCB = 1V, IE = 0, f = 1MHz

2

|

VCE = 1V, IC = 1mA, f = 800MHz
VCE = 1V, IC = 1mA, f = 800MHz
VCE = 1V, IC = 1mA, f = 800MHz

Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.

typ

0.4

6.0
15

3.5

max

Unit

1

µA

1

µA

200

4

GHz

pF
dB
dB
dB

1

Transistor 2SC4410

PC — Ta IC — V

80

)

70

mW

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

)

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

)

CE

6

5

)
mA

(

4

C

3

2

Collector current I

1

0

0 2.42.01.60.4 1.20.8

IB=50µA

Collector to emitter voltage VCE (V

hFE — I

C

240

FE

200

160

120

80

40

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

45µA
40µA

35µA
30µA

25µA
20µA
15µA

10µA

5µA

VCE=1V

)

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

12

)

10

GHz

(

T

8

6

4

2

Transition frequency f

0

0.1 1 10 1000.3 3 30

IC — V

BE

VCE=1V

25˚C

Ta=75˚C –25˚C

fT — I

C

VCE=1V
f=800MHz
Ta=25˚C

Collector current IC (mA

)

)

)
pF

(

Cob — V

1.2

1.0

ob

0.8

0.6

0.4

0.2

CB

Collector output capacitance C

0

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

GUM — I

24

)
dB

(

20

16

12

8

4

Maximum unilateral power gain GUM

0

0.1 1 10 1000.3 3 30

)

Collector current IC (mA

C

VCE=1V
f=800MHz
Ta=25˚C

NF — I

C

)
dB

(

6

5

4

3

2

VCE=1V
(R

=50Ω)

g

f=800MHz
Ta=25˚C

Noise figure NF

1

0

0.1 1 10 1000.3 3 30

)

Emitter current IE (mA

)