Panasonic 2SC4391 Datasheet

Transistor

2SC4391

Silicon NPN epitaxial planer type

For low-frequency output amplification
Complementary to 2SA1674

Features

■

●

Low collector to emitter saturation voltage V

●

High collector to emitter voltage V

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Rank R S

h

FE1

120 ~ 240 170 ~ 340

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

.

CEO

Ratings

–55 ~ +150

80
80

1.5

150

.

CE(sat)

5

1
1

VCB = 40V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

Unit

V
V
V
A

A
W
˚C
˚C

Conditions

*2

*2

*2

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

min

80
80

5

120

60

2.5±0.1

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

2.5±0.1

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

typ

max

0.15

0.85
120

10

*2

Pulse measurement

0.1

340

0.3

1.2

20

Unit: mm

0.5

4.5±0.114.5±0.5

(HW type)

Unit

µA

V
V
V

V
V

MHz

pF

1

Transistor 2SC4391

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

10

)
V

(

3

BE(sat)

1

0.3

0.1

0.03

0.01

0.003

Base to emitter saturation voltage V

0.001

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

25˚C

C

IC/IB=10

Ta=–25˚C

100˚C

Collector current IC (A

)

V

CE

)

1.2

1.0

)

A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0108264

)

Collector to emitter voltage VCE (V

500

FE

400

300

Ta=100˚C

200

100

25˚C

–25˚C

IB=8mA

hFE — I

7mA

6mA
5mA

4mA
3mA

2mA

1mA

)

C

VCE=2V

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –10 –100 –1000–3 –30 –300

Emitter current IE (mA

CE(sat)

Ta=75˚C

25˚C

fT — I

— I

–25˚C

E

C

IC/IB=10

)

VCB=10V
Ta=25˚C

)

)
pF

(

Cob — V

60

50

ob

40

30

20

10

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)