Panasonic 2SC4208A, 2SC4208 Datasheet

Transistor

2SC4208, 2SC4208A

Silicon NPN epitaxial planer type

For low-frequency output amplification and driver amplification
Complementary to 2SA1619 and 2SA1619A

Features

■

●

Low collector to emitter saturation voltage V

●

Output of 1W is obtained with a complementary pair with
2SA1619 and 2SA1619A.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SC4208
2SC4208A
2SC4208

2SC4208A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

30
60
25
50

500

150

–55 ~ +150

7
1

1

CE(sat)

.

Unit

V

V

V
A

mA

W
˚C
˚C

1.27

5.0±0.2

123

2.54±0.15

0.7±0.2

0.7±0.1

0.45

1.27

+0.15
–0.1

8.0±0.2

13.5±0.5

0.45

2.3±0.2

Unit: mm

4.0±0.2

+0.15
–0.1

1:Emitter
2:Collector
3:Base
TO–92NL Package

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage

2SC4208
2SC4208A
2SC4208
2SC4208A

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank Q R S

h

FE1

85 ~ 170 120 ~ 240 170 ~ 340

Conditions

VCB = 20V, IE = 0

IC = 10µA, IE = 0

IC = 10mA, IB = 0

IE = 10µA, IC = 0

*1

VCE = 10V, IC = 150mA
VCE = 10V, IB = 500mA

*2

*2

IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

30
60
25
50

7
85
40

typ

max

0.35

1.1
150

6

*2

Pulse measurement

0.1

340

0.6

1.5

15

Unit

µA

V

V

V

V
V

MHz

pF

1

Transistor 2SC4208, 2SC4208A

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

)

C

IC/IB=10

)

CE

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

020164128

IB=10mA

9mA

8mA

7mA

6mA

Ta=25˚C

5mA

4mA

3mA

2mA

1mA

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

25˚C

Collector current IC (A

C

IC/IB=10

Ta=75˚C

–25˚C

)

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

0108264

)

Base current IB (mA

hFE — I

300

FE

250

Ta=75˚C

200

150

100

Forward current transfer ratio h

25˚C

–25˚C

50

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC — I

B

VCE=10V
Ta=25˚C

)

C

VCE=10V

)

fT — I

240

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

2

E

12

VCB=10V
Ta=25˚C

)
pF

(

10

ob

8

6

4

2

Collector output capacitance C

0

)

Collector to base voltage VCB (V

Cob — V

1 3 10 30 100

CB

IE=0
f=1MHz
Ta=25˚C

120

)
V

(

100

CER

80

60

40

20

Collector to emitter voltage V

)

Base to emitter resistance RBE (kΩ

V

— R

CER

0

1 10 100 10003 30 300

BE

2SA4208A

2SA4208

IC=2mA
Ta=25˚C

)