Panasonic 2SC4152 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SC4152

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CER

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

1400
1400

700

5

1.0

0.3
20

2

150

–55 to +150

FE

Unit

V
V
V
V
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current

Collector to emitter voltage

Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CER

V

CEO

V

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 1100V, IE = 0
VEB = 4V, IC = 0
IC = 1mA, RBE = 100Ω
IC = 1mA, IB = 0
IE = 1mA, IC = 0
VCE = 5V, IC = 30mA
IC = 60mA, IB = 6mA
IC = 60mA, IB = 6mA
VCE = 10V, IC = 30mA, f = 1MHz
VCB = 100V, IE = 0, f = 1MHz

IC = 0.15A, IB1 = 15mA, IB2 = –30mA,
VCC = 250V

min

1400

700

5

10

typ

12

max

Unit

10
10

µA
µA

V
V
V

40

2
2

V
V

MHz

6

2
3
1

pF

µs
µs
µs

1

Po wer Transistors 2SC4152

PC—Ta IC—V

40

)
W

(

C

30

(1)

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

0.3

Base to emitter saturation voltage V

0.1

0.001

0.003

Collector current IC (A

=Ta

(1) T

C

(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

BE(sat)—IC

TC=–25˚C

100˚C

25˚C

0.01 0.1 1

0.03 0.3

IC/IB=10

)

CE

120

100

)
A

(

80

C

60

40

IB=5mA

TC=25˚C

4mA

3mA

2mA

1mA

Collector current I

20

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

C

1000

FE

300

100

TC=100˚C

30

10

3

Forward current transfer ratio h

1

0.001 0.01 0.1 10.003 0.03 0.3

25˚C

–25˚C

Collector current IC (A

VCE=5V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

)

300

MHz

(

T

100

30

10

Transition frequency f

V

CE(sat)—IC

3

1

TC=100˚C

25˚C

0.001

0.01 0.1 1

0.003

0.03 0.3

Collector current IC (A

fT—I

3

1

0.001

0.01 0.1 1

0.003

0.03 0.3

Collector current IC (A

–25˚C

C

IC/IB=10

)

VCE=10V
f=1MHz
T

=25˚C

C

)

Cob—V

1000

)
pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
0 0.80.2 0.60.4

Collector current IC (A

t

stg

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=250V

CC

=25˚C

T

C

t

on

t

f

Area of safe operation (ASO)

10

3

)

1

A

(

C

0.3

0.1

0.03

0.01

Collector current I

0.003

0.001
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

t=1ms

10ms

DC

)