Panasonic 2SC3982A, 2SC3982 Datasheet

Po wer Transistors

2SC3982, 2SC3982A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

2SC3982
2SC3982A
2SC3982
2SC3982A

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

900

1000

900

1000

800

7
15
10

5

150

3.5

150

–55 to +150

FE

Unit

V

V

V
V
A
A
A

W

˚C
˚C

6.010.0

26.0±0.520.0±0.5

1.5

2.5

20.0±0.5

1.5

Solder Dip

10.9±0.5

123

φ 3.3±0.2

4.02.0

2.0±0.3

3.0±0.3

1.0±0.2

5.45±0.3

Unit: mm

5.0±0.3

3.0

3.0

2.0

1.5

2.7±0.3

0.6±0.2

1:Base
2:Collector
3:Emitter

TOP–3L Package

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SC3982

2SC3982A
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 900V, IE = 0
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 4A
IC = 4A, IB = 0.8A
IC = 4A, IB = 0.8A
VCE = 5V, IC = 1A, f = 1MHz

IC = 4A, IB1 = 0.8A, IB2 = –1.6A,
VCC = 250V

min

800

8
6

typ15max

50
50
50

1.5

1.5

0.7

3.0

0.3

Unit

µA

µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC3982, 2SC3982A

PC—Ta IC—V

200

)
W

(

(1)

C

150

100

50

Collector power dissipation P

(2)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

1

100˚C

0.3

Base to emitter saturation voltage V

0.1

0.1 1 10 1000.3 3 30

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=3.5W)

(P

C

(3)

V

BE(sat)—IC

TC=–25˚C

25˚C

Collector current IC (A

IC/IB=5

)

CE

12

IB=2A

10

)
A

(

8

C

6

4

Collector current I

2

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

TC=100˚C

30

25˚C

10

Forward current transfer ratio h

–25˚C

3

1

0.1 1 10 1000.3 3 30

Collector current IC (A

TC=25˚C

1A

0.5A

0.4A

0.3A

0.2A

0.1A

0.05A

C

VCE=5V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

100

)

30

MHz

(

T

10

0.3

Transition frequency f

0.1

V

CE(sat)—IC

3

1

0.1 1 10 1000.3 3 30

TC=100˚C

25˚C

–25˚C

Collector current IC (A

fT—I

C

VCE=5V
f=1MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=5

)

=25˚C

)

Cob—V

10000

)
pF

(

3000

ob

1000

300

100

30

Collector output capacitance C

10

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
082647153

Collector current IC (A

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=200V

CC

=25˚C

T

C

t

stg

t

f

t

on

Area of safe operation (ASO)

100

30

I

CP

)

10

A

(

I

C

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

0.5ms
1ms

10ms

DC

t=0.1ms

)