Panasonic 2SC3980A, 2SC3980 Datasheet

Po wer Transistors

2SC3980, 2SC3980A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature

2SC3980
2SC3980A
2SC3980
2SC3980A

TC=25°C
Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

900

1000

900

1000

800

7
6
4
2

70

3

150

–55 to +150

FE

Unit

V

V

V
V
A
A
A

W

˚C
˚C

21.0±0.516.2±0.5

3.5 0.715.0±0.2

12.5
Solder Dip

15.0±0.3

11.0±0.2

φ3.2±0.1

2.0±0.2

1.1±0.1

5.45±0.3

10.9±0.5

321

TOP–3 Full Pack Package(a)

Unit: mm

5.0±0.2

3.2

2.0±0.1

0.6±0.2

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SC3980

2SC3980A
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 900V, IE = 0
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 2A
IC = 2A, IB = 0.4A
IC = 2A, IB = 0.4A
VCE = 5V, IC = 0.2A, f = 1MHz

IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,
VCC = 250V

min

800

8
6

typ15max

50
50
50

1.5

1.5

0.7

2.5

0.3

Unit

µA

µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SC3980, 2SC3980A

PC—Ta IC—V

80

)

(1)

70

W

(

C

60

50

40

30

20

(2)

10

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=3W)

(P

C

V

BE(sat)—IC

IC/IB=5

CE

6

5

)
A

(

4

C

3

2

IB=1000mA

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

TC=100˚C

30

TC=25˚C

500mA

400mA
300mA

200mA
150mA
100mA

50mA

C

VCE=5V

25˚C

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

100

)

30

MHz

(

T

10

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

TC=100˚C

Collector current IC (A

fT—I

C

VCE=5V
f=1MHz
T

C

3

IC/IB=5

–25˚C

)

=25˚C

25˚C

Cob—V

TC=100˚C

–25˚C

CB

)

IE=0
f=1MHz

=25˚C

T

C

1

0.3

Base to emitter saturation voltage V

0.1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

1000

)
pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

10

3

Forward current transfer ratio h

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
082647153

)

Collector current IC (A

–25˚C

, tf — I

stg

t

on

C

Pulsed tw=1ms
Duty cycle=1%

=5

I

C/IB

=–IB2)

(2I

B1

V

=200V

CC

=25˚C

T

C

t

stg

t

f

1

0.3

Transition frequency f

0.1

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

)

Area of safe operation (ASO)

100

30

)

10

I

A

CP

(

C

I

3

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

t=10ms

DC

)

2